ノベルクリスタルテクノロジー List of Products and Services

This technical document covers the "Ultra-Low Loss Gallium Oxide Schottky Barrier Diode." Our company has successfully reduced forward loss by up to 40% compared to commercially available SiC Schottky diodes. We are advancing the development of high-current drive devices, aiming for commercialization starting in the fiscal year 2021. We also introduce the "Gallium Oxide Trench MOSFET." [Contents] ■ Ultra-Low Loss Gallium Oxide Schottky Barrier Diode ■ Gallium Oxide Trench MOSFET *For more details, please refer to the PDF document or feel free to contact us.

• Other polymer materials

Gallium oxide is a semiconductor material that allows for rapid growth, enabling the production of bulk crystals using the melt growth method. Compared to GaN and SiC, which produce bulk crystals through vapor phase growth, it is considered possible to reduce substrate costs. Additionally, it is predicted that the breakdown electric field strength will be greater than that of GaN and SiC, making it expected that power devices with a high withstand voltage of over 6000V can be manufactured while keeping switching losses low. 【Features】 ■ Capable of producing bulk single crystals at low cost ■ Potential for high withstand voltage power devices exceeding GaN and SiC *For more details, please download the PDF or feel free to contact us.

• Other metal materials
• Other semiconductors