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Gallium oxide is a semiconductor material that allows for rapid growth, enabling the production of bulk crystals using the melt growth method. Compared to GaN and SiC, which produce bulk crystals through vapor phase growth, it is considered possible to reduce substrate costs. Additionally, it is predicted that the breakdown electric field strength will be greater than that of GaN and SiC, making it expected that power devices with a high withstand voltage of over 6000V can be manufactured while keeping switching losses low. 【Features】 ■ Capable of producing bulk single crystals at low cost ■ Potential for high withstand voltage power devices exceeding GaN and SiC *For more details, please download the PDF or feel free to contact us.
IoTデバイス開発・運用の課題を解決。各ポイント解説資料を進呈
