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The "VLB505-01R" is a single-circuit gate drive unit capable of directly paralleling SiC modules up to the 3300V/750A class. By using the adapter board VLA595-04R, it becomes easy to parallel drive LV100 packages manufactured by Mitsubishi Electric Corporation. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±36A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThe "VLB506-01R" is a single-circuit gate amplifier module capable of directly driving IGBT modules up to the 1700V/3600A class. 【Features】 ■ SIP structure that facilitates high-density mounting ■ Built-in high insulation voltage digital isolator ■ Built-in isolated DC-DC converter for gate drive ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Adjustable short-circuit detection suppression time ■ Maximum gate output peak current of 40A ■ Insulation withstand voltage of 4000Vrms for 1 minute ■ Input signal can operate with CMOS logic IC (input signal is high-active type) ■ Built-in low voltage lockout function for gate power supply voltage VCC *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThe "VLA557-03R" is a gate drive unit with a single circuit that can directly drive IGBT modules up to the 3300V/600A class in parallel. By using the adapter board VLA595-01R, parallel driving of Mitsubishi Electric Corporation's LV100 package becomes easier. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±24A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThe "VLB517-01R" is a single-circuit gate drive unit capable of directly driving 10.2kV insulated gate bipolar transistor (IGBT) modules in the 4.5kV/1500A class and 3.3kV/1800A class. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±40A ■ Insulation withstand voltage 10.2kVrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Signal input/output interface compatible with optical fiber *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThe "VLB520-01R" is an adapter unit that can be directly mounted on a thin dual-type IGBT module. 【Features】 ■ Can be directly mounted on a thin dual-type IGBT module ■ Flexible adjustment of the number of gate parallels ■ Built-in Total Line length Adjustment Circuit (TLAC) allows for equalization of the total wiring length from gate to emitter for each parallel device ■ Easy gate wiring processing ■ Connected to the gate drive unit via a harness ■ Built-in connector for thermistor *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThe "VLB521-01R" is an adapter unit for parallel connection of HV100 type HVIGBT modules. It can be connected to the gate drive unit (VLB517-01R) via a harness, and it incorporates a Total Line length Adjustment Circuit (TLAC) that allows for equalization of the total gate-emitter wiring length for each parallel device. 【Features】 ■ Can be directly mounted on HV100 type IGBT modules ■ Flexible adjustment of the number of parallel gates ■ Easy gate wiring processing ■ Built-in connector for thermistors *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationWe would like to introduce our "high current, high voltage MOSFETs." These devices enable high-speed switching and are suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches. They are appropriate for applications including LED driving, small capacity motor driving, DC-DC converters, load switches, high-speed switching, and analog switches. 【Features】 ■ Capable of high-speed switching ■ Suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThe "INKE series" features a built-in Zener diode connected between the drain and source, which protects the MOSFET from back electromotive force during motor and solenoid drive operations. By incorporating a Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET, the Zener diode will break down first when overcurrent/voltage is applied to the drain, thereby protecting the built-in MOSFET. The avalanche and surge ratings between the drain and source have been significantly improved, eliminating the need for a freewheeling diode for back electromotive force recovery. 【Features】 ■ Built-in Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET ■ The Zener diode breaks down first when overcurrent/voltage is applied to the drain, protecting the built-in MOSFET ■ Significant improvement in avalanche and surge ratings between the drain and source ■ No need for a freewheeling diode for back electromotive force recovery *For more details, please refer to the PDF document or feel free to contact us.
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