イサハヤ電子 Product Lineup

The RT8H060C and RT8H070C are ICs that detect overvoltage on power and signal lines. They monitor overvoltage by inputting a signal from a voltage divider of the power and load lines into the IC. When overvoltage is detected, they output a signal to indicate an abnormal condition. Since they have a built-in timer circuit, it is possible to prevent false detection from transient voltage spikes. The output format adopts a latch type, meaning that once overvoltage is detected, the signal indicating an abnormal condition continues to be output even after the overvoltage state is cleared. To reset the abnormal detection state, it is necessary to either recycle the power or input a reset signal to the product, allowing for safe resumption of operation. The voltage value for detecting overvoltage and the timer duration can be set externally for this product, allowing for flexible configuration according to the customer's circuit conditions.

• ASIC
• Dedicated IC
• Other semiconductors

The 『RT8H020C』 is an IC that detects two abnormal conditions: overcurrent and overvoltage on the power and load lines. The overcurrent detection function monitors the voltage across a current sensing resistor connected externally to the IC, allowing it to detect overcurrent conditions. The detection circuit includes hysteresis to prevent false detection. The overvoltage detection function monitors the voltage of the target by using a resistor divider to scale down the voltage. The output is an OR output of the overcurrent detection signal and the overvoltage detection signal, which means that if either abnormal condition is detected, it will output a signal (Low) to indicate the abnormality. Additionally, the output format is open collector, allowing for input to different power systems (level shifting). The detection values for overcurrent and overvoltage can be set using resistors connected externally to the IC, allowing for flexible configuration according to the customer's circuit conditions.

• ASIC
• Dedicated IC
• Other semiconductors

The "RT8H010C" is an IC that detects overcurrent in power and load lines. By inserting a current sensing resistor in the power and load lines, it monitors overcurrent based on the voltage difference across the resistor. When overcurrent is detected, it outputs a signal (High signal) to indicate an abnormal condition. It has a built-in timer circuit, which prevents false detection of inrush currents during power-up. The output format adopts a latch type, meaning that once overcurrent is detected, it will continue to output the abnormal signal even if the overcurrent condition is removed. To clear the abnormal detection state, it is necessary to either reset the power or input a reset signal to the product, allowing for a safe resumption of operation. The current value for detecting overcurrent and the timer duration can be set externally, allowing for flexible configuration according to the customer's circuit conditions.

• ASIC
• Dedicated IC
• Other semiconductors

This is a DC-DC converter that supports a maximum input of 1500V. We have prepared two types of products for evaluation samples: a 24V/200W output type and a 280V/200W output type. The evaluation samples are available for loan. 24V output type: VLA350-24200 280V output type: VLA349-280200 【Features】 ■ Wide input range of DC800 to 1500V ■ High insulation of 4.4kV between input and output ■ Reduced losses through input multiplexing configuration ■ Built-in output overcurrent protection function ■ Built-in output overvoltage protection function ■ Customizable options available Customization is possible to meet customer requirements, such as changing the number of units or connection configurations, and considerations for higher capacity versions are also possible! *For more details, please refer to the PDF document or feel free to contact us.

• converter
• Switching Power Supply
• power supply

Do you have any of the following concerns? ■ Standard power supplies are over-spec and inventory management is difficult ■ Unable to complete the development of high-performance power supplies in-house ■ Want to enhance product value with inverter and power supply technology ■ Cannot find products within the desired input voltage range ■ Want to allocate power supply development resources to core technologies ■ Want to achieve high-performance operation linked with peripheral circuits We can solve these issues with Isahaya Electronics' custom power supplies and custom inverters! Based on your requests, we will propose the optimal power supply for you using our power supply technology. Feel free to contact us!

• Switching Power Supply

The "VLB512-01R/VLB519-01R" is a gate drive unit for SiCMOSFET modules with an RTC circuit built by Mitsubishi Electric Corporation. 【Features】 ■ Simple and easy-to-handle dual-circuit gate drive system ■ Built-in short-circuit detection circuit compatible with the RTC circuit in the module ■ Built-in short-circuit protection circuit ■ Connected to the MOSFET module via harness ■ Built-in isolated DC-DC converter for gate power supply ■ Output gate peak current: +/-30A (max) ■ Isolation withstand voltage: 4000Vrms (1 minute) 【Specifications】 <VLB512-01R> ■ Gate output power: up to 10W ■ Board size: 90×145mm <VLB519-01R> ■ Gate output power: up to 3.75W ■ Board size: 80×130mm *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "GAU220P-15402" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/1800A class. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. Additionally, it features a built-in isolated DC-DC converter for gate driving, with a maximum gate output peak current of ±20A. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±20A ■ Isolation withstand voltage of 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "GAU240P-15405" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/3600A class. It has a built-in isolated DC-DC converter for gate driving. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±40A ■ Isolation withstand voltage 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB505-01R" is a single-circuit gate drive unit capable of directly paralleling SiC modules up to the 3300V/750A class. By using the adapter board VLA595-04R, it becomes easy to parallel drive LV100 packages manufactured by Mitsubishi Electric Corporation. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±36A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB506-01R" is a single-circuit gate amplifier module capable of directly driving IGBT modules up to the 1700V/3600A class. 【Features】 ■ SIP structure that facilitates high-density mounting ■ Built-in high insulation voltage digital isolator ■ Built-in isolated DC-DC converter for gate drive ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Adjustable short-circuit detection suppression time ■ Maximum gate output peak current of 40A ■ Insulation withstand voltage of 4000Vrms for 1 minute ■ Input signal can operate with CMOS logic IC (input signal is high-active type) ■ Built-in low voltage lockout function for gate power supply voltage VCC *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLA557-03R" is a gate drive unit with a single circuit that can directly drive IGBT modules up to the 3300V/600A class in parallel. By using the adapter board VLA595-01R, parallel driving of Mitsubishi Electric Corporation's LV100 package becomes easier. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±24A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB517-01R" is a single-circuit gate drive unit capable of directly driving 10.2kV insulated gate bipolar transistor (IGBT) modules in the 4.5kV/1500A class and 3.3kV/1800A class. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±40A ■ Insulation withstand voltage 10.2kVrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Signal input/output interface compatible with optical fiber *For more details, please refer to the PDF document or feel free to contact us.

• power supply

The "VLB520-01R" is an adapter unit that can be directly mounted on a thin dual-type IGBT module. 【Features】 ■ Can be directly mounted on a thin dual-type IGBT module ■ Flexible adjustment of the number of gate parallels ■ Built-in Total Line length Adjustment Circuit (TLAC) allows for equalization of the total wiring length from gate to emitter for each parallel device ■ Easy gate wiring processing ■ Connected to the gate drive unit via a harness ■ Built-in connector for thermistor *For more details, please refer to the PDF document or feel free to contact us.

• LED Module

The "VLB521-01R" is an adapter unit for parallel connection of HV100 type HVIGBT modules. It can be connected to the gate drive unit (VLB517-01R) via a harness, and it incorporates a Total Line length Adjustment Circuit (TLAC) that allows for equalization of the total gate-emitter wiring length for each parallel device. 【Features】 ■ Can be directly mounted on HV100 type IGBT modules ■ Flexible adjustment of the number of parallel gates ■ Easy gate wiring processing ■ Built-in connector for thermistors *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

We would like to introduce our "high current, high voltage MOSFETs." These devices enable high-speed switching and are suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches. They are appropriate for applications including LED driving, small capacity motor driving, DC-DC converters, load switches, high-speed switching, and analog switches. 【Features】 ■ Capable of high-speed switching ■ Suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches *For more details, please refer to the PDF document or feel free to contact us.

• DC Motor
• LED Module
• Transistor

The "INKE series" features a built-in Zener diode connected between the drain and source, which protects the MOSFET from back electromotive force during motor and solenoid drive operations. By incorporating a Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET, the Zener diode will break down first when overcurrent/voltage is applied to the drain, thereby protecting the built-in MOSFET. The avalanche and surge ratings between the drain and source have been significantly improved, eliminating the need for a freewheeling diode for back electromotive force recovery. 【Features】 ■ Built-in Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET ■ The Zener diode breaks down first when overcurrent/voltage is applied to the drain, protecting the built-in MOSFET ■ Significant improvement in avalanche and surge ratings between the drain and source ■ No need for a freewheeling diode for back electromotive force recovery *For more details, please refer to the PDF document or feel free to contact us.

• diode
• Transistor