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  3. イサハヤ電子
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Electronic Components and Semiconductors
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イサハヤ電子

EstablishmentMarch 26, 1973
capital48597Ten thousand
addressOsaka/Kita-ku, Osaka-shi/1-5 Tōyama-cho (Sankyō Umeda Building 9F)
phone06-4709-7218
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last updated:Jun 17, 2025
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イサハヤ電子 List of Products and Services

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Gate Drive Unit "VLB505-01R"

Supports parallel operation of 3300V/750A class SiC modules in 4 configurations!

The "VLB505-01R" is a single-circuit gate drive unit capable of directly paralleling SiC modules up to the 3300V/750A class. By using the adapter board VLA595-04R, it becomes easy to parallel drive LV100 packages manufactured by Mitsubishi Electric Corporation. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±36A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit *For more details, please refer to the PDF document or feel free to contact us.

  • Power Supplies

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Gate amplifier module "VLB506-01R"

Can be directly driven by a 1700V/3600A class IGBT module!

The "VLB506-01R" is a single-circuit gate amplifier module capable of directly driving IGBT modules up to the 1700V/3600A class. 【Features】 ■ SIP structure that facilitates high-density mounting ■ Built-in high insulation voltage digital isolator ■ Built-in isolated DC-DC converter for gate drive ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Adjustable short-circuit detection suppression time ■ Maximum gate output peak current of 40A ■ Insulation withstand voltage of 4000Vrms for 1 minute ■ Input signal can operate with CMOS logic IC (input signal is high-active type) ■ Built-in low voltage lockout function for gate power supply voltage VCC *For more details, please refer to the PDF document or feel free to contact us.

  • Power Supplies

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Gate Drive Unit "VLA557-03R"

3300V/600A class IGBT module, capable of parallel driving with 4 units!

The "VLA557-03R" is a gate drive unit with a single circuit that can directly drive IGBT modules up to the 3300V/600A class in parallel. By using the adapter board VLA595-01R, parallel driving of Mitsubishi Electric Corporation's LV100 package becomes easier. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±24A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

  • Power Supplies

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Gate Drive Unit "VLB517-01R"

4.5kV/1500A class HVIGBT module can be driven!

The "VLB517-01R" is a single-circuit gate drive unit capable of directly driving 10.2kV insulated gate bipolar transistor (IGBT) modules in the 4.5kV/1500A class and 3.3kV/1800A class. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±40A ■ Insulation withstand voltage 10.2kVrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Signal input/output interface compatible with optical fiber *For more details, please refer to the PDF document or feel free to contact us.

  • power supply

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Adapter unit "VLB520-01R"

Can be directly mounted on a slim dual-type IGBT module!

The "VLB520-01R" is an adapter unit that can be directly mounted on a thin dual-type IGBT module. 【Features】 ■ Can be directly mounted on a thin dual-type IGBT module ■ Flexible adjustment of the number of gate parallels ■ Built-in Total Line length Adjustment Circuit (TLAC) allows for equalization of the total wiring length from gate to emitter for each parallel device ■ Easy gate wiring processing ■ Connected to the gate drive unit via a harness ■ Built-in connector for thermistor *For more details, please refer to the PDF document or feel free to contact us.

  • LED Module

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Adapter Unit "VLB521-01R"

Directly mountable on HV100 type IGBT modules!

The "VLB521-01R" is an adapter unit for parallel connection of HV100 type HVIGBT modules. It can be connected to the gate drive unit (VLB517-01R) via a harness, and it incorporates a Total Line length Adjustment Circuit (TLAC) that allows for equalization of the total gate-emitter wiring length for each parallel device. 【Features】 ■ Can be directly mounted on HV100 type IGBT modules ■ Flexible adjustment of the number of parallel gates ■ Easy gate wiring processing ■ Built-in connector for thermistors *For more details, please refer to the PDF document or feel free to contact us.

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High current, high voltage MOSFET

High-speed switching is possible! Introducing our lineup of high current, high voltage MOSFETs!

We would like to introduce our "high current, high voltage MOSFETs." These devices enable high-speed switching and are suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches. They are appropriate for applications including LED driving, small capacity motor driving, DC-DC converters, load switches, high-speed switching, and analog switches. 【Features】 ■ Capable of high-speed switching ■ Suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches *For more details, please refer to the PDF document or feel free to contact us.

  • DC Motor
  • LED Module
  • Transistor

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Zener diode integrated MOSFET "INKE Series"

Surge tolerance increased by built-in Zener and stable high avalanche tolerance achieved!

The "INKE series" features a built-in Zener diode connected between the drain and source, which protects the MOSFET from back electromotive force during motor and solenoid drive operations. By incorporating a Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET, the Zener diode will break down first when overcurrent/voltage is applied to the drain, thereby protecting the built-in MOSFET. The avalanche and surge ratings between the drain and source have been significantly improved, eliminating the need for a freewheeling diode for back electromotive force recovery. 【Features】 ■ Built-in Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET ■ The Zener diode breaks down first when overcurrent/voltage is applied to the drain, protecting the built-in MOSFET ■ Significant improvement in avalanche and surge ratings between the drain and source ■ No need for a freewheeling diode for back electromotive force recovery *For more details, please refer to the PDF document or feel free to contact us.

  • diode
  • Transistor

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