イサハヤ電子 Product Lineup

Our ICS series consists of Schottky barrier diodes made from SiC. By using SiC as the material, we achieve high current and high voltage characteristics that were not possible with silicon, while also maintaining the fast recovery characteristics of Schottky barrier diodes. By using them in power supply circuits for PFC (power factor correction circuits) and as freewheeling diodes in inverter circuits, we contribute to improving power supply efficiency and reducing excess power consumption during switching. Compared to fast recovery diodes known for their high-speed recovery characteristics, our products have achieved a 33.6% increase in efficiency and a 48.2% reduction in losses. Additionally, beyond improving power supply efficiency, our SiC Schottky barrier diodes offer advantages such as operation in high-temperature environments exceeding silicon and longer lifespan, so we encourage you to try our SiC Schottky barrier diodes.

• diode

The "MFT" is a mini custom IC that is constructed using a combination of transistors, resistors, capacitors, and other components to provide functionality in a circuit. A core chip with pre-arranged transistors, resistors, capacitors, etc., is prepared in advance, and the circuit design and aluminum wiring are applied according to the customer's specifications to complete the chip. After that, the product is assembled and finished to meet the customer's specifications. The "MFT" allows for the completion of the product chip with only changes in the aluminum wiring process, resulting in significant reductions in wafer processing time and cost savings on auxiliary materials such as photomasks compared to full custom ICs, making it possible to commercialize products at a lower cost. Additionally, by consolidating components, it enables a reduction in the number of parts in the customer's set, contributing to a decrease in the product's circuit board area. This product is ideal for customers who find it challenging to realize custom ICs.

• Dedicated IC

The electrostatic discharge protection diode is a component that protects internal circuits from surge voltages and plays an important role in improving system reliability. It is a type of Zener diode that can suppress surge voltages to a certain level, thereby reducing peak voltage. When a large voltage, such as electrostatic discharge, is applied, the TVS breaks down and allows a large current to flow to the ground side. This absorbs the energy of the surge voltage, ensuring that no voltage exceeding the breakdown voltage of the TVS is applied to the subsequent circuits. Our company is the only manufacturer in Japan producing the lead-insertion type TO-92S, offering a lineup from standard capacity types to high-speed transmission electrostatic protection with low capacitance between the anode and cathode. We are also gradually expanding our product line to include AEC-Q101 compliant products, so we kindly ask you to consider our products.

• diode

We would like to introduce our mass-produced high-frequency transistors. This product is manufactured using a silicon high-frequency process, featuring a high gain-bandwidth product (fT), making it ideal for high-frequency amplification applications such as oscillation circuits for tuners and keyless entry systems, as well as amplification circuits for image sensors. We offer a lineup with fT values of 1.1GHz, 4.5GHz, and 8GHz, and they come in compact packages such as SC-59, SC-70, and SC-75A, allowing for miniaturization of sets and high-density mounting. Additionally, many high-frequency transistors from other domestic manufacturers have reached EOL (end of life), but we continue to produce them. If you are facing issues with EOL products from other companies, we encourage you to consider our offerings at this opportunity.

• Transistor

Introducing our general-purpose MOSFET. This product can be used for various applications due to its general-purpose nature. Target applications include LED driving, motor driving, lithium-ion charging control, DC-DC converters, and load switches, among others. The product specifications include a maximum VDSS of 60V, a maximum ID of 0.7A, and a threshold voltage ranging from 0.5 to 2.0V, making it a versatile general-purpose MOSFET with various characteristics. Additionally, we offer ultra-compact packages such as SC-75A, SC-70, and SC-59, making it suitable for new adoptions as well as alternatives for EOL products from other companies. Some products are also compatible with automotive applications, so please refer to the brochure for details or contact our sales team for inquiries.

• Transistor

RT8H182E is a power supply voltage monitoring IC that detects power supply voltage interruptions or drops and generates a reset signal (L output). It can monitor two power supply systems, including the power supply voltage. The monitoring voltage for the power supply voltage can be changed by external resistors. The detection voltage for the other power supply voltage can be adjusted using a resistor divider. It is also possible to set the delay time for reset release using an external capacitor. Additionally, this product has one built-in comparator. Since this comparator has an open-collector output, level shifting using any power supply is possible. By inputting the power supply voltage using a resistor divider, it can also be used for overvoltage detection. By connecting the reset output terminal to the input terminal of this comparator, it can also be used for logical inversion of the reset output.

• ASIC

This product incorporates two window comparator circuits. It outputs high (H) when the input signal (VS) is within the range of two reference voltages (VIN1 & VIN2) that can be determined externally. The output of each comparator is an open collector output, allowing for level shifting using any power supply. With this single product, you can monitor two systems for voltage drop and overvoltage simultaneously, as well as process sensor signals. Additionally, compared to the RT8H151C, which has one built-in window comparator circuit, this product has a wider power supply voltage range, making it usable even when the power supply voltage is high (17V to 36V).

• ASIC

The RT8H060C and RT8H070C are ICs that detect overvoltage on power and signal lines. They monitor overvoltage by inputting a signal from a voltage divider of the power and load lines into the IC. When overvoltage is detected, they output a signal to indicate an abnormal condition. Since they have a built-in timer circuit, it is possible to prevent false detection from transient voltage spikes. The output format adopts a latch type, meaning that once overvoltage is detected, the signal indicating an abnormal condition continues to be output even after the overvoltage state is cleared. To reset the abnormal detection state, it is necessary to either recycle the power or input a reset signal to the product, allowing for safe resumption of operation. The voltage value for detecting overvoltage and the timer duration can be set externally for this product, allowing for flexible configuration according to the customer's circuit conditions.

• ASIC
• Dedicated IC
• Other semiconductors

The 『RT8H020C』 is an IC that detects two abnormal conditions: overcurrent and overvoltage on the power and load lines. The overcurrent detection function monitors the voltage across a current sensing resistor connected externally to the IC, allowing it to detect overcurrent conditions. The detection circuit includes hysteresis to prevent false detection. The overvoltage detection function monitors the voltage of the target by using a resistor divider to scale down the voltage. The output is an OR output of the overcurrent detection signal and the overvoltage detection signal, which means that if either abnormal condition is detected, it will output a signal (Low) to indicate the abnormality. Additionally, the output format is open collector, allowing for input to different power systems (level shifting). The detection values for overcurrent and overvoltage can be set using resistors connected externally to the IC, allowing for flexible configuration according to the customer's circuit conditions.

• ASIC
• Dedicated IC
• Other semiconductors

The "RT8H010C" is an IC that detects overcurrent in power and load lines. By inserting a current sensing resistor in the power and load lines, it monitors overcurrent based on the voltage difference across the resistor. When overcurrent is detected, it outputs a signal (High signal) to indicate an abnormal condition. It has a built-in timer circuit, which prevents false detection of inrush currents during power-up. The output format adopts a latch type, meaning that once overcurrent is detected, it will continue to output the abnormal signal even if the overcurrent condition is removed. To clear the abnormal detection state, it is necessary to either reset the power or input a reset signal to the product, allowing for a safe resumption of operation. The current value for detecting overcurrent and the timer duration can be set externally, allowing for flexible configuration according to the customer's circuit conditions.

• ASIC
• Dedicated IC
• Other semiconductors

This is a DC-DC converter that supports a maximum input of 1500V. We have prepared two types of products for evaluation samples: a 24V/200W output type and a 280V/200W output type. The evaluation samples are available for loan. 24V output type: VLA350-24200 280V output type: VLA349-280200 【Features】 ■ Wide input range of DC800 to 1500V ■ High insulation of 4.4kV between input and output ■ Reduced losses through input multiplexing configuration ■ Built-in output overcurrent protection function ■ Built-in output overvoltage protection function ■ Customizable options available Customization is possible to meet customer requirements, such as changing the number of units or connection configurations, and considerations for higher capacity versions are also possible! *For more details, please refer to the PDF document or feel free to contact us.

• converter
• Switching Power Supply
• power supply

Do you have any of the following concerns? ■ Standard power supplies are over-spec and inventory management is difficult ■ Unable to complete the development of high-performance power supplies in-house ■ Want to enhance product value with inverter and power supply technology ■ Cannot find products within the desired input voltage range ■ Want to allocate power supply development resources to core technologies ■ Want to achieve high-performance operation linked with peripheral circuits We can solve these issues with Isahaya Electronics' custom power supplies and custom inverters! Based on your requests, we will propose the optimal power supply for you using our power supply technology. Feel free to contact us!

• Switching Power Supply

The "VLB512-01R/VLB519-01R" is a gate drive unit for SiCMOSFET modules with an RTC circuit built by Mitsubishi Electric Corporation. 【Features】 ■ Simple and easy-to-handle dual-circuit gate drive system ■ Built-in short-circuit detection circuit compatible with the RTC circuit in the module ■ Built-in short-circuit protection circuit ■ Connected to the MOSFET module via harness ■ Built-in isolated DC-DC converter for gate power supply ■ Output gate peak current: +/-30A (max) ■ Isolation withstand voltage: 4000Vrms (1 minute) 【Specifications】 <VLB512-01R> ■ Gate output power: up to 10W ■ Board size: 90×145mm <VLB519-01R> ■ Gate output power: up to 3.75W ■ Board size: 80×130mm *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "GAU220P-15402" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/1800A class. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. Additionally, it features a built-in isolated DC-DC converter for gate driving, with a maximum gate output peak current of ±20A. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±20A ■ Isolation withstand voltage of 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "GAU240P-15405" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/3600A class. It has a built-in isolated DC-DC converter for gate driving. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±40A ■ Isolation withstand voltage 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB505-01R" is a single-circuit gate drive unit capable of directly paralleling SiC modules up to the 3300V/750A class. By using the adapter board VLA595-04R, it becomes easy to parallel drive LV100 packages manufactured by Mitsubishi Electric Corporation. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±36A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB506-01R" is a single-circuit gate amplifier module capable of directly driving IGBT modules up to the 1700V/3600A class. 【Features】 ■ SIP structure that facilitates high-density mounting ■ Built-in high insulation voltage digital isolator ■ Built-in isolated DC-DC converter for gate drive ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Adjustable short-circuit detection suppression time ■ Maximum gate output peak current of 40A ■ Insulation withstand voltage of 4000Vrms for 1 minute ■ Input signal can operate with CMOS logic IC (input signal is high-active type) ■ Built-in low voltage lockout function for gate power supply voltage VCC *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLA557-03R" is a gate drive unit with a single circuit that can directly drive IGBT modules up to the 3300V/600A class in parallel. By using the adapter board VLA595-01R, parallel driving of Mitsubishi Electric Corporation's LV100 package becomes easier. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±24A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB517-01R" is a single-circuit gate drive unit capable of directly driving 10.2kV insulated gate bipolar transistor (IGBT) modules in the 4.5kV/1500A class and 3.3kV/1800A class. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±40A ■ Insulation withstand voltage 10.2kVrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Signal input/output interface compatible with optical fiber *For more details, please refer to the PDF document or feel free to contact us.

• power supply

The "VLB520-01R" is an adapter unit that can be directly mounted on a thin dual-type IGBT module. 【Features】 ■ Can be directly mounted on a thin dual-type IGBT module ■ Flexible adjustment of the number of gate parallels ■ Built-in Total Line length Adjustment Circuit (TLAC) allows for equalization of the total wiring length from gate to emitter for each parallel device ■ Easy gate wiring processing ■ Connected to the gate drive unit via a harness ■ Built-in connector for thermistor *For more details, please refer to the PDF document or feel free to contact us.

• LED Module

The "VLB521-01R" is an adapter unit for parallel connection of HV100 type HVIGBT modules. It can be connected to the gate drive unit (VLB517-01R) via a harness, and it incorporates a Total Line length Adjustment Circuit (TLAC) that allows for equalization of the total gate-emitter wiring length for each parallel device. 【Features】 ■ Can be directly mounted on HV100 type IGBT modules ■ Flexible adjustment of the number of parallel gates ■ Easy gate wiring processing ■ Built-in connector for thermistors *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

We would like to introduce our "high current, high voltage MOSFETs." These devices enable high-speed switching and are suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches. They are appropriate for applications including LED driving, small capacity motor driving, DC-DC converters, load switches, high-speed switching, and analog switches. 【Features】 ■ Capable of high-speed switching ■ Suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches *For more details, please refer to the PDF document or feel free to contact us.

• DC Motor
• LED Module
• Transistor

The "INKE series" features a built-in Zener diode connected between the drain and source, which protects the MOSFET from back electromotive force during motor and solenoid drive operations. By incorporating a Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET, the Zener diode will break down first when overcurrent/voltage is applied to the drain, thereby protecting the built-in MOSFET. The avalanche and surge ratings between the drain and source have been significantly improved, eliminating the need for a freewheeling diode for back electromotive force recovery. 【Features】 ■ Built-in Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET ■ The Zener diode breaks down first when overcurrent/voltage is applied to the drain, protecting the built-in MOSFET ■ Significant improvement in avalanche and surge ratings between the drain and source ■ No need for a freewheeling diode for back electromotive force recovery *For more details, please refer to the PDF document or feel free to contact us.

• diode
• Transistor