イサハヤ電子 Product Lineup

The "RT8H101C" is a single comparator with one circuit. It can be used for voltage comparators and has high versatility, and because it is realized in a compact package, it contributes to the miniaturization of sets. Furthermore, it has a wide operating power supply voltage range, allowing it to be used even when the power supply voltage is high (17V to 36V). Please feel free to contact our sales department when you need assistance!

• ASIC

INK0310AC1 is a variant of the current mass-produced product INK0310AP1, designed in the SC59 package instead of the SOT89 package. Therefore, like the SOT89 package, it has a high drain current and is a 2A class product in a compact package. Additionally, it is suitable for automotive applications and complies with AEC standards.

• Transistor

- The collector-emitter saturation voltage is low, making it optimal for audio mute applications. - The VEBO is high, eliminating the need for a reverse current prevention diode. - The reverse hFE is high, allowing for audio mute of negative side signals as well. - In addition to the small surface mount package, we also offer types with built-in resistors, composite types (with 2 pieces), and buffer PNP composite types, enabling miniaturization and high-density mounting of the set.

• Transistor

The BS08 series silicon bidirectional switching device is an integrated circuit that has bidirectional switching characteristics. The static characteristics are almost opposite for both directions, making it optimal for triggering various types of thyristors.

• Transistor

It is a product with low on-resistance and fast switching speed. Due to the large drain current, it is suitable for applications that require high current.

• Transistor

This is a package designed for surface mounting with a flat lead type that minimizes losses during implementation and can be used for high current applications. It has a low on-resistance, making it suitable for applications that require high current.

• Transistor

This is a MOSFET made from SiC. By using SiC as the material, it is possible to achieve high voltage resistance and low resistance characteristics that could not be realized with silicon, as well as to reduce switching losses compared to IGBTs. By using it in PFC (power factor correction circuits), DC-DC converters, and inverter circuits, it contributes to the high efficiency of power supplies.

• diode

This series is a shunt regulator with a high precision reference voltage of 2.495V ±1% and a current capability of ±80mA. By connecting two external resistors to the REF terminal, it is possible to set any output voltage in the range up to 36V based on VREF. The absolute value of the dynamic impedance between the K terminal and the A terminal is low at 0.2Ω, ensuring voltage stability. This series is available in three types: two mounting types in SC-59 package (RT9H301C) and SOT-89 package (RT9H301P), and one insertion type in TO-92S package (RT9H301S). Since you can choose from packages with different sizes and mounting methods, optimizing the PCB layout is easy, greatly expanding the design flexibility. Please feel free to contact our sales team when you need assistance!

• ASIC

The "RT8H052C" is an IC that detects current from the shunt resistor of a three-phase inverter to protect against overcurrent. The detection voltage can be freely set with an external resistor. This product has no output terminals, and by connecting a PNP transistor to the VCC terminal, it gains output functionality. This PNP transistor switches based on fluctuations in the IC's circuit current during overcurrent detection, and this is reflected in the output state. If you have any inquiries, please feel free to contact our sales team!

• ASIC

High-voltage bipolar transistors with a breakdown voltage of over 300V, adapted to high-voltage environments.

• Transistor

This product is equipped with a power cut circuit, allowing for easy control of the product's operation start/stop from external sources simply by switching the applied voltage to the ON/OFF terminals. Additionally, it features a UVLO (Under Voltage Lock Out) circuit, which automatically starts operation when the supply voltage is approximately 16V or higher and stops when it falls below approximately 14V, ensuring a safe design. It adopts a circuit configuration as an IGBT driver and performs the following operations in response to the GATEIN terminal input: - When Low→High input: The B terminal outputs Low when the input voltage is approximately 2.7V or higher. - When High→Low input: The B terminal outputs High when the input voltage is approximately 2.5V or lower. By adopting this product, you can contribute to reducing power consumption when using IGBTs, as well as to the overall power saving of the system. It is an ideal product for customers who want to "reduce power consumption" and "easily implement external control." For more details, please feel free to contact our sales representative.

• ASIC

This product is designed with a built-in UVLO circuit that starts operation at approximately 14.2V and stops operation when it falls below approximately 12.4V, ensuring safety. Additionally, it adopts a circuit configuration as an IGBT driver, where the GATEIN terminal performs the following actions in relation to the input: - When input changes from Low to High: The B terminal outputs Low when the input voltage is approximately 2.7V or higher. - When input changes from High to Low: The B terminal outputs High when the input voltage is approximately 2.5V or lower. By adopting this product, you can contribute to reducing power consumption during IGBT use, as well as enhancing overall system energy efficiency. It is an ideal product for customers who want to "reduce power consumption" or "easily implement external control." For more details, please feel free to contact our sales representative.

• ASIC

This is a DC-DC converter that supports a maximum input of 1500V. We have prepared two types of products for evaluation samples: a 24V/200W output type and a 280V/200W output type. The evaluation samples are available for loan. 24V output type: VLA350-24200 280V output type: VLA349-280200 【Features】 ■ Wide input range of DC800 to 1500V ■ High insulation of 4.4kV between input and output ■ Reduced losses through input multiplexing configuration ■ Built-in output overcurrent protection function ■ Built-in output overvoltage protection function ■ Customizable options available Customization is possible to meet customer requirements, such as changing the number of units or connection configurations, and considerations for higher capacity versions are also possible! *For more details, please refer to the PDF document or feel free to contact us.

• converter
• Switching Power Supply
• power supply

Do you have any of the following concerns? ■ Standard power supplies are over-spec and inventory management is difficult ■ Unable to complete the development of high-performance power supplies in-house ■ Want to enhance product value with inverter and power supply technology ■ Cannot find products within the desired input voltage range ■ Want to allocate power supply development resources to core technologies ■ Want to achieve high-performance operation linked with peripheral circuits We can solve these issues with Isahaya Electronics' custom power supplies and custom inverters! Based on your requests, we will propose the optimal power supply for you using our power supply technology. Feel free to contact us!

• Switching Power Supply

The "VLB512-01R/VLB519-01R" is a gate drive unit for SiCMOSFET modules with an RTC circuit built by Mitsubishi Electric Corporation. 【Features】 ■ Simple and easy-to-handle dual-circuit gate drive system ■ Built-in short-circuit detection circuit compatible with the RTC circuit in the module ■ Built-in short-circuit protection circuit ■ Connected to the MOSFET module via harness ■ Built-in isolated DC-DC converter for gate power supply ■ Output gate peak current: +/-30A (max) ■ Isolation withstand voltage: 4000Vrms (1 minute) 【Specifications】 <VLB512-01R> ■ Gate output power: up to 10W ■ Board size: 90×145mm <VLB519-01R> ■ Gate output power: up to 3.75W ■ Board size: 80×130mm *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "GAU220P-15402" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/1800A class. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. Additionally, it features a built-in isolated DC-DC converter for gate driving, with a maximum gate output peak current of ±20A. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±20A ■ Isolation withstand voltage of 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "GAU240P-15405" is a gate drive unit with two circuits that can directly drive IGBT modules up to the 1700V/3600A class. It has a built-in isolated DC-DC converter for gate driving. By using the adapter board VLA595-02R, parallel driving of Mitsubishi Electric Corporation's LV100 package is made easy. 【Features】 ■ Built-in isolated DC-DC converter for gate driving ■ Maximum gate output peak current ±40A ■ Isolation withstand voltage 4000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB505-01R" is a single-circuit gate drive unit capable of directly paralleling SiC modules up to the 3300V/750A class. By using the adapter board VLA595-04R, it becomes easy to parallel drive LV100 packages manufactured by Mitsubishi Electric Corporation. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±36A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB506-01R" is a single-circuit gate amplifier module capable of directly driving IGBT modules up to the 1700V/3600A class. 【Features】 ■ SIP structure that facilitates high-density mounting ■ Built-in high insulation voltage digital isolator ■ Built-in isolated DC-DC converter for gate drive ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Adjustable short-circuit detection suppression time ■ Maximum gate output peak current of 40A ■ Insulation withstand voltage of 4000Vrms for 1 minute ■ Input signal can operate with CMOS logic IC (input signal is high-active type) ■ Built-in low voltage lockout function for gate power supply voltage VCC *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLA557-03R" is a gate drive unit with a single circuit that can directly drive IGBT modules up to the 3300V/600A class in parallel. By using the adapter board VLA595-01R, parallel driving of Mitsubishi Electric Corporation's LV100 package becomes easier. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±24A ■ Isolation withstand voltage 6000Vrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

The "VLB517-01R" is a single-circuit gate drive unit capable of directly driving 10.2kV insulated gate bipolar transistor (IGBT) modules in the 4.5kV/1500A class and 3.3kV/1800A class. 【Features】 ■ Built-in isolated DC-DC converter for gate drive ■ Maximum gate output peak current ±40A ■ Insulation withstand voltage 10.2kVrms for 1 minute ■ Built-in short-circuit protection circuit (with soft shutdown function) ■ Signal input/output interface compatible with optical fiber *For more details, please refer to the PDF document or feel free to contact us.

• power supply

The "VLB520-01R" is an adapter unit that can be directly mounted on a thin dual-type IGBT module. 【Features】 ■ Can be directly mounted on a thin dual-type IGBT module ■ Flexible adjustment of the number of gate parallels ■ Built-in Total Line length Adjustment Circuit (TLAC) allows for equalization of the total wiring length from gate to emitter for each parallel device ■ Easy gate wiring processing ■ Connected to the gate drive unit via a harness ■ Built-in connector for thermistor *For more details, please refer to the PDF document or feel free to contact us.

• LED Module

The "VLB521-01R" is an adapter unit for parallel connection of HV100 type HVIGBT modules. It can be connected to the gate drive unit (VLB517-01R) via a harness, and it incorporates a Total Line length Adjustment Circuit (TLAC) that allows for equalization of the total gate-emitter wiring length for each parallel device. 【Features】 ■ Can be directly mounted on HV100 type IGBT modules ■ Flexible adjustment of the number of parallel gates ■ Easy gate wiring processing ■ Built-in connector for thermistors *For more details, please refer to the PDF document or feel free to contact us.

• Power Supplies

We would like to introduce our "high current, high voltage MOSFETs." These devices enable high-speed switching and are suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches. They are appropriate for applications including LED driving, small capacity motor driving, DC-DC converters, load switches, high-speed switching, and analog switches. 【Features】 ■ Capable of high-speed switching ■ Suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches *For more details, please refer to the PDF document or feel free to contact us.

• DC Motor
• LED Module
• Transistor

The "INKE series" features a built-in Zener diode connected between the drain and source, which protects the MOSFET from back electromotive force during motor and solenoid drive operations. By incorporating a Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET, the Zener diode will break down first when overcurrent/voltage is applied to the drain, thereby protecting the built-in MOSFET. The avalanche and surge ratings between the drain and source have been significantly improved, eliminating the need for a freewheeling diode for back electromotive force recovery. 【Features】 ■ Built-in Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET ■ The Zener diode breaks down first when overcurrent/voltage is applied to the drain, protecting the built-in MOSFET ■ Significant improvement in avalanche and surge ratings between the drain and source ■ No need for a freewheeling diode for back electromotive force recovery *For more details, please refer to the PDF document or feel free to contact us.

• diode
• Transistor