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Gaianixx

addressTokyo/Bunkyo-ku/7-3-1 Hongo, University of Tokyo, South Research Building, Entrepreneur Lab
phone080-8846-2254
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last updated:Dec 04, 2024
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Silicon wafer with platinum single crystal thin film

The properties are improved by single crystal metal films.

Gaianixx has achieved the epitaxial growth of high-quality platinum thin films on silicon substrates using its unique multifunctional intermediate membrane, resulting in single crystal thin films with (100) single orientation. Compared to polycrystalline materials, single crystals have fewer electrical defects due to the absence of grain boundaries, leading to lower electrical resistance and higher electrical conductivity. Therefore, it is expected to contribute to the performance improvement of semiconductors and electronic devices. Platinum thin films are used as bottom electrodes in various devices and are also applied in temperature sensors, among other uses. *For more details, please refer to the PDF document or feel free to contact us.*

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Regarding martensite epitaxy PZT single crystal piezoelectric thin film wafers.

Achieving excellent piezoelectric properties! We offer specifications tailored to your applications.

Introducing "Martensite Epitaxy PZT Single Crystal Piezoelectric Thin Film Wafers." By utilizing a unique multifunctional intermediate layer, we achieve high-quality single crystal thin films that exhibit superior piezoelectric properties compared to conventional piezoelectric thin films. Additionally, we can achieve spontaneous piezoelectricity that retains polarization without the need for poling treatment, allowing us to offer specifications tailored to various applications. 【Product Lineup】 ■ Mono-One Type (Sensor Applications) ■ Deli-One Type (Ultrasonic Transducer Applications) ■ Co-Poly Type (Actuator Applications) *For more details, please refer to the PDF document or feel free to contact us.

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About core technology

Introducing the "multifunctional intermediate film" that enables high-quality single crystals through a layered structure!

We would like to introduce our core technology. Gaianixx's versatile intermediate membrane implements "martensitic transformation," which allows the lattice to change its distance relationship without disrupting its positional relationship under specific conditions. By utilizing the lattice mismatch that occurs in heteroepitaxy as a driving force, we have successfully enhanced the lattice coherence of functional thin films through "dynamic lattice matching" caused by twinned martensitic transformation. 【Features】 ■ By generating dynamic lattice matching through twinned martensitic transformation driven by lattice mismatch, we can crystallize the top functional film into a single crystal. ■ It is also possible to grow high-quality single crystals without dragging defects from the substrate. ■ It is expected to significantly contribute to yield and cost improvements. *For more details, please refer to the PDF document or feel free to contact us.

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Gaianixx Inc. Company Information

A startup from the University of Tokyo! Developed and manufactured using versatile intermediate membranes.

Our company is engaged in the research and development, manufacturing, and sales of intermediate films and epitaxial materials. We develop and manufacture single crystal films that are essential for adding high value, miniaturization, and cost reduction of semiconductors, including MEMS, power devices, and LED products, utilizing our unique multifunctional intermediate films. Please feel free to contact us when you need our services. 【Business Overview】 ■ Research and development, manufacturing, and sales of intermediate films and epitaxial materials 【History and Awards】 ■ 1990 - Fundamental research on dynamic lattice matching intermediate films ■ 2019 - Fundamental and applied research on multifunctional intermediate films ■ 2020 - Practical application of multifunctional intermediate film TM technology ■ November 2021 - Establishment of Gaianixx Co., Ltd. ■ June 2022 - Series A funding from the University of Tokyo Edge Capital (UTEC) ■ January 2023 - Selected for the "Grand Prize" for outstanding utilization results in the Ministry of Education, Culture, Sports, Science and Technology's Advanced Material Research Infrastructure Project ■ June 2023 - Series B funding ■ December 2023 - Series B 2nd round funding *For more details, please refer to the PDF materials or feel free to contact us.

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