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Features ■ Achieves high productivity by adopting a post-oxidation method ■ Realizes excellent film thickness uniformity of ±1% or less ■ Allows for full-area sputtering through horizontal substrate transport
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Free membership registrationFeatures ■ Low attenuation radio wave transmission film (discontinuous film) ■ Easy automation due to sheet-type design ■ Proven track record with the top market share in Japan
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Free membership registrationFeatures ■ Adopts a clean side sputtering method ■ Available in two models: load-lock type and batch type ■ Easy operation and film formation condition management via a touch panel, with a device concept that facilitates maintenance ■ Compact design that does not require much installation space ■ A wide range of options to meet customer requests and applications ■ Supports low-temperature and high-temperature sputtering ■ Standard equipped with a sputtering source that provides good distribution over a wide area (within ±5% (for SiO2 within φ170mm)) ■ Automatic transport options available for small-scale production and nighttime automatic operation ■ Applications - Organic EL, solar cells, optical components, bio, semiconductor and electronic components, automotive and resin, special films, MEMS ■ Typical film formation materials - Dielectric films and others SiN, SiO2, ZrO, TiO2, polymer films - Transparent conductive films ITO, ZnO - Metal films and others Au, Ag, Cu, Si, Ti, Sn, Cr, Al, Ni, DLC, electromagnetic wave shielding
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