Generation of a neutral beam with no charge. Manufactured by Oxford Alraid Research, UK.
By neutralizing the beam, it is also optimal for irradiation and etching processes of dielectrics and semiconductors, where charged particles have been a concern until now. ≪Applications≫ ■ Substrate cleaning before film formation ■ Sample cleaning and surface activation before room temperature bonding ■ Etching of semiconductor substrates, etc. ■ Microfabrication ■ Reactive atom beam etching ≪Features≫ ■ Unlike impacts from charged ions, there is no charge damage to insulating or semiconductor samples ■ Since the beam is charge-free, it travels straight without bending even in electric or magnetic fields.
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basic information
It can be used for substrate cleaning, sputter etching, and room temperature bonding with inert gases such as Ar and Xe. *Please download the catalog for specifications and dimensions.
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The HP is currently being renewed, so please contact us through the Ipros inquiry form.
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