Equipped with a heating mechanism suitable for the growth of thermally decomposed graphene on SiC substrates.
The design and development concept of the epitaxial graphene crystal growth device using the sic surface thermal decomposition method focuses on miniaturization and simplification of the graphene growth apparatus. It aims for high crystal quality and reproducibility of growth, as well as the addition and connectivity of surface analysis equipment, making it economically feasible for investment. The formation of graphene was confirmed from the diffraction pattern. A graphene/buffer layer has been formed. The streaks are believed to be due to the one-dimensional structure of graphene on the facets. Graphene is uniformly formed on terraces (0001) approximately 250 nm wide, and the periodic structure is a result of step punching unique to the off-substrate. The formation of graphene was also confirmed through micro-Raman measurements. The Raman spectra of the terraces (red) and facets (blue) shown in the optical microscope image of the sample surface are presented. It is a typical graphene spectrum, confirming that it is a single layer graphene based on the half-width of the 2D peak. Additionally, the D band is significantly larger on the facets, which is believed to reflect the one-dimensional structure of graphene. This was clearly observed in the mapping as well. For more details, please contact us or refer to the catalog.
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【Features】 ○ Epitaxial graphene formation device using sic surface decomposition method ○ Equipped with a heating mechanism suitable for thermal decomposition graphene growth on sic substrates → Easy connection and expansion to existing UHV chambers after growth ○ Ultra-high vacuum compatible → Can be connected to ultra-high vacuum surface analysis and evaluation devices, contributing to high-quality film formation ○ Gas introduction system mount structure → Introduces gas to the substrate surface, ensuring an efficient and reproducible epitaxial growth environment ○ Compact chamber allows for in-situ observation with RHEED/LEED expansion ○ Growth conditions → Temperature: 1800°C (bairometer) → Time: 10 minutes → Atmosphere: High purity argon gas (360 sccm) at atmospheric pressure ● For more details, please contact us or refer to the catalog.
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