SiC (Silicon Carbide)

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last updated：Jun 27, 2019

新陽

Official site

Small on-resistance! It is also used as a substrate for light-emitting diodes.

Introducing the main product of Shinyo Corporation, 'SiC (Silicon Carbide)'. It has a bandgap that is about three times wider than silicon (3.26 eV), a thermal conductivity that is more than three times greater (4.9 W/cm·k), and a breakdown voltage that is about ten times higher (2.8 MV/cm). When the on-resistance is reduced to the same level as silicon at 10 mΩ·cm², the withstand voltage reaches 1200 V. It is suitable for power MOSFETs, IGBTs, Schottky Barrier Diodes (SBD), etc. In addition to semiconductors, it is also used as a substrate for light-emitting diodes (LEDs). [Features (SiC Power Semiconductor Devices)] ■ Low on-resistance ■ Short switching time ■ High-temperature operation *For more details, please refer to the PDF document or feel free to contact us.

Related Link - https://www.sinyo.jp/products/sic/index.html

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basic information

【Physical Properties】 ■ Polytype: 4H-SiC ■ Crystal Structure: Hexagonal ■ Band Gap: ~3.2 eV ■ Thermal Conductivity: ~4.9 W/cm·K ■ Electron Mobility: ~1140 cm²/V·s ■ Lattice Constants: a ~3.073 Å, c ~10.053 Å ■ Mohs Hardness: ~9.15 *For more details, please refer to the PDF document or feel free to contact us.