Research tools for high-stress GaN devices
This explains the theoretical model of GaN multi-quantum wells (MQW) under high stress. It is possible to obtain the following results for GaN device LEDs grown on silicon in arbitrary crystal orientations using the CrossLight device simulator. The tensile stress from the silicon substrate reduces the band gap of the multi-quantum wells (MQW) and results in a longer wavelength. There is a decrease in piezoelectric charges within the multi-quantum wells (MQW). The reduction in internal quantum efficiency (IQE) is caused by the increase in piezoelectric charges at the electron blocking layer (EBL) interface.
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basic information
<Main Features> ■ General-purpose 2D/3D finite element analysis and design software for semiconductor devices ■ Applicable to almost all device design and analysis except for semiconductor lasers ■ Usable for the design of devices made from silicon and compounds <Diverse Physical Models and Functions> ■ Current-voltage (I-V) characteristics ■ Two-dimensional distribution of potential, electric field, and current ■ Two-dimensional distribution of hot carrier temperature in fluid dynamics models ■ Two-dimensional distribution of lattice temperature used in thermal transport models ■ Band diagrams under various bias conditions ■ Results of AC small-signal response analysis at arbitrary frequency ranges ■ Subbands of quantum wells using a carrier mixing model ■ Two-dimensional distribution of impurity occupancy and density trapped at deep levels in semiconductors ■ Two-dimensional optical field distribution of optical devices such as photodetectors ■ Current dependence of the self-emission spectrum of LEDs ■ FDTD interface <Interface> ■ Standard tools for structural input and result display ■ Written in a proprietary scripting language, executable from GUI or command line ■ Programmable control via batch files or scripting language
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Research on high-stress GaN devices
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Crosslight Software Inc. (formerly Beamtek Software Inc.) is an international company that became independent from the National Research Council of Canada in 1992 and established its headquarters in Canada. Currently, it is headquartered in Vancouver, with a branch established in Shanghai in 1997 and another in Chiba City, Japan, in September 2001. As a developer of TCAD software that analyzes the physical properties of semiconductor laser devices, light-emitting and light-receiving elements, MEMS, and MOCVD processes, we are a leading company that consistently provides cutting-edge physical models for semiconductor optoelectronics and electronic device and process technologies. Our flagship product, the three-dimensional semiconductor laser diode simulator PICS3D, received the Commercial Technology Achievement Award from the industry magazine Laser Focus World in 1998.