SiC = Silicon carbide refractory (recrystallized, silicon-impregnated silicon carbide)

Recrystallized silicon carbide using high-purity SiC raw materials. It will ensure cost reduction.

Oxide-bonded SiC (silicon carbide) has a thermal conductivity that is more than twice that of silicon carbide, and its strength is more than five times greater, maintaining stable strength from room temperature up to 1600°C. This is high-performance SiC, specifically silicon carbide refractory. - Recrystallized SiC "R-SiC" Recrystallized SiC is formed by sintering silicon carbide particles at temperatures above 2000°C. It has a purity of 99%, making it highly pure and particularly suitable for firing processes that are sensitive to impurities. Its maximum operating temperature is extremely high at 1650°C. - Silicon-impregnated SiC "Si-SiC" Silicon-impregnated SiC is a dense material that fills the pores between silicon carbide particles with silicon, reducing the porosity to nearly zero. It has extremely high thermal conductivity and strength, maintaining stable strength up to 1350°C. It is used in beams, rollers, nozzles, and other applications. As a refractory material under high temperatures, SiC (silicon carbide) maintains its strength sufficiently compared to concerns about strength degradation with conventional cordierite and alumina. It is also optimal for firing heavy objects and for environments that require high purity, such as electronic devices and electrode materials that are sensitive to impurities.

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