200MHz photoreceiver combining high-speed photodiode technology and high-speed current amplifier from Femto.
- There are two types of diodes: Si-based and InGaAs-based, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 2×10^4 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 2×10^4 V/W. - Thanks to a sophisticated DC-coupled multi-stage amplifier design, measurements with a bandwidth of DC–200MHz corresponding to a minimum rise time of 1.8ns are possible. - The minimum NEP value is approximately 6pW/√Hz, allowing for the detection of optical power signals in the μW range without unnecessary averaging.
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basic information
■Wavelength range: 400 to 1700 nm ■Bandwidth: DC to 400 kHz ■Maximum conversion gain: 107 V/W ■Minimum: NEP 75 fW/√Hz
Price range
P3
Delivery Time
P4
Applications/Examples of results
■Spectroscopy ■High-speed pulse/transient measurement ■Optical trigger ■Optical front end for oscilloscope/A/D converter/RF lock-in amplifier
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Company information
■New products related to barcodes ■Laser diode related ■We accept orders for optical fiber connector processing. *We are currently accepting orders for communication to large diameter with short delivery times! ■Manufacturing of ultra-stabilized LD modules and light source devices ■Import and sales of various semiconductor lasers ■Import and sales of optical modulators and optical peripheral components ■Other import and sales of scientific and analytical instruments and parts