A high-performance 2GHz photoreceiver that combines cutting-edge photodiode technology with GHz amplifiers from Femto.
- The diode type is made of Si/InGaAs, with wavelength ranges of 320–1000nm/850–1700nm respectively. - The Si model HSA-X-S-1G4-SI has a ball range placed on the front of the detector chip, with an active area diameter of 0.8mm. - The transimpedance is 5×10^3 V/A. - The minimum NEP is only 14pW/vHz, making it measurable even at μW range optical power levels.
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basic information
■HSA-X-S/HSPR-X-I Series ■Wavelength Range: 320 to 1700 nm ■Bandwidth: 10 kHz to 2 GHz ■Maximum Conversion Gain: 4.5 × 10³ V/W ■Minimum: NEP approximately 14 pW/√Hz
Price range
P3
Delivery Time
P4
Applications/Examples of results
■Spectroscopy ■High-speed pulse and transient measurement ■Optical triggering ■Optical front end for oscilloscope and A/D converter
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Company information
■New products related to barcodes ■Laser diode related ■We accept orders for optical fiber connector processing. *We are currently accepting orders for communication to large diameter with short delivery times! ■Manufacturing of ultra-stabilized LD modules and light source devices ■Import and sales of various semiconductor lasers ■Import and sales of optical modulators and optical peripheral components ■Other import and sales of scientific and analytical instruments and parts