Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!
Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.
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![[Information] Shirutoku Report No. 99 #About SiC MOSFETs](https://image.mono.ipros.com/public/product/image/b0e/2000721479/IPROS17420958947102014837.jpg?w=280&h=280)
