It is composed of MBE film formation mechanisms, surface thermal analysis mechanisms, and RHRRD crystal structure analysis systems!
The product is an in-situ system that combines the growth mechanism of graphene crystal thin films using "MBE method" and "surface thermal decomposition method" with RHEED/LEED surface analysis mechanisms. Using a 6H-SiC micro-tilted ([1-100] 4° off) substrate with a (0001) surface (Si face), the formation of graphene was confirmed through diffraction patterns during the growth of graphene. Additionally, the formation of graphene was also confirmed through micro-Raman measurements. 【Components】 ■ MBE deposition mechanism equipped with a "high-temperature K cell for graphene thin film growth" ■ Surface thermal analysis mechanism using a "heating holder for thermal decomposition of SiC substrate" ■ RHRRD crystal structure analysis system ■ LEED surface observation system *For more details, please refer to the PDF materials or feel free to contact us.
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Evaluation of Graphene Grown by Crystal Growth - Growth Conditions ■ Temperature: 1800°C (pyrometer) ■ Time: 10 minutes ■ Atmosphere: High purity argon gas (360 sccm) at atmospheric pressure *For more details, please refer to the PDF document or feel free to contact us.*
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