An example of measuring the stress distribution around an indentation made on SiC used in semiconductors! Analyzed with visible light laser.
Our company conducts stress distribution measurement using micro laser Raman spectroscopy. Residual stress can have various adverse effects on products, such as deformation and failure. There are several measurement methods available, and Raman spectroscopy is one effective means. In the related link, we present examples of stress distribution measurements around indentations made on SiC used in semiconductors, along with graphs and photographs. 【Features】 ■ Analysis equipment: RAMAN ■ Analysis method: Visible light laser ■ Analysis target: Raman-active materials (semiconductors, carbon, polymers, etc.) ■ Surface resolution: Approximately 1μm *For more details, please refer to the related link or feel free to contact us.
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【Purpose】 ■Stress distribution measurement *For more details, please refer to the related links or feel free to contact us.
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Daitō Analysis Research has been advancing the establishment of an advanced think tank based on highly reliable analysis and analytical techniques accumulated in various material fields, as well as the challenges received from a wide range of industry customers. We aim to solve our customers' various issues with the least cost and the shortest delivery time. Moving forward, we would like to support our customers' research and development using the latest equipment and advanced manpower, and assist in creating products that enrich the future.
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