Technical Information Magazine 202102-03 Evaluation of States in Semiconductors Using XAFS
The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.
**Abstract** The addition of dopants to semiconductors is a very important technology for controlling electrical properties, and the mechanism of carrier generation due to doping is understood based on the theories of solid-state physics. However, there are few examples of direct evaluations of the chemical states and coordination environments of dopant elements. State evaluations for each element are possible through XAFS, and recent improvements in detector sensitivity have made it possible to sensitively observe the chemical states and coordination environments of trace amounts of dopant elements. This paper presents examples of state evaluations of arsenic and phosphorus in silicon semiconductors using XAFS. **Table of Contents** 1. Introduction 2. Analytical Samples and Experimental Methods 3. XAFS Evaluation of Arsenic in Silicon 4. XAFS Evaluation of Phosphorus in Silicon 5. Conclusion
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Technical Information Magazine The TRC News "Evaluation of the State of Trace Dopants in Semiconductors Using XAFS" [Abstract] The addition of dopants to semiconductors is a very important technology for controlling electrical properties, and the mechanism of carrier generation due to doping is understood based on the theories of solid-state physics. However, there are few examples of direct evaluations of the chemical state and coordination environment of dopant elements. State evaluations for each element are possible using XAFS, and recent improvements in detector sensitivity have made it possible to sensitively observe the chemical state and coordination environment of trace dopant elements. This paper presents examples of state evaluations of arsenic and phosphorus in silicon semiconductors using XAFS. [Table of Contents] 1. Introduction 2. Analytical Samples and Experimental Methods 3. XAFS Evaluation of Arsenic in Silicon 4. XAFS Evaluation of Phosphorus in Silicon 5. Conclusion [Figures and Tables] Figure 1 As K-edge XANES Spectrum Figure 2 As K-edge FT-EXAFS Spectrum Table 1 As K-edge FT-EXAFS Curve Fitting Results Figure 3 Images of the State and Surrounding Structure of Arsenic with and without Annealing Figure 4 P K-edge XANES Spectrum
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