The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.
**Abstract** Gallium oxide (Ga2O3) is attracting attention as a next-generation power semiconductor material, and research has been actively conducted in recent years. Optimizing process technology is essential for improving the reliability and characteristics of semiconductor devices, making the evaluation methods crucial. This paper presents examples of crystal structure analysis necessary for assessing the quality of epitaxial films, as well as the analysis of impurities, defects, and carrier concentration in the ion implantation process, which significantly impacts device characteristics. **Table of Contents** 1. Introduction 2. Crystal structure analysis using cross-sectional TEM and planar STEM 3. Evaluation of the ion implantation process 4. Conclusion
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Technical Information Magazine The TRC News "Crystal Structure Analysis of Gallium Oxide and Evaluation of Ion Implantation Process" [Abstract] Gallium oxide (Ga2O3) is attracting attention as a next-generation power semiconductor material, and research has been actively conducted in recent years. Optimizing process technology is essential for improving the reliability and characteristics of semiconductor devices, making evaluation methods crucial. This paper introduces cases of crystal structure analysis necessary for evaluating the quality of epitaxial films, as well as the analysis of impurities, defects, and carrier concentration in the ion implantation process, which significantly impacts device characteristics. [Table of Contents] 1. Introduction 2. Crystal Structure Analysis by Cross-Sectional TEM and Planar STEM 3. Evaluation of Ion Implantation Process 4. Conclusion [Figures and Tables] Figures 1 to 13 Cross-sectional images, high-resolution TEM images of interface layers, electron diffraction patterns, atomic resolution planar HAADF-STEM images and STEM images, atomic resolution planar HAADF-STEM images of crystal defects Analysis results after ion implantation and annealing treatment, comparison of CL intensity of samples with different implantation amounts and annealing temperatures, relationship between carrier concentration and dC/dV signal intensity.
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