Technical Information Magazine 201901-01 Analysis and Evaluation Technology of Ga2O3 Films
The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.
**Abstract** Gallium oxide (Ga2O3), which has a larger bandgap than SiC and GaN, is gaining attention as a new power device material. With the development of thin film growth technologies for device applications, the importance of analysis and evaluation techniques for Ga2O3 thin films is expected to increase. This paper introduces cases of crystal structure analysis of Ga2O3 films fabricated on sapphire substrates, as well as the evaluation of impurities and defects. **Table of Contents** 1. Introduction 2. Samples 3. Analysis Results 4. Conclusion
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Technical Information Magazine The TRC News "Analysis and Evaluation Techniques for Ga2O3 Films" [Abstract] Gallium oxide (Ga2O3), which has a larger bandgap than SiC and GaN, is attracting attention as a new power device material. With the development of thin film growth techniques for device applications, the importance of analysis and evaluation techniques for Ga2O3 thin films is expected to increase. This paper introduces cases of crystal structure analysis of Ga2O3 films fabricated on sapphire substrates, as well as evaluations of impurities and defects. [Table of Contents] 1. Introduction 2. Samples 3. Analysis Results 4. Conclusion [Figures and Tables] Figure 1: Crystal structure of Ga2O3 Figure 2: X-ray diffraction spectra in the normal direction and in-plane direction of the sample Figure 3: Raman spectra Figure 4: Surface SEM image and cross-sectional TEM image of the Sn 0.1% target sample Figure 5: Selected area electron diffraction pattern of the Sn 0.1% target sample Figure 6: SIMS analysis results of Sn concentration Figure 7: sMIM-C signal profile Figure 8: CL spectrum (accelerating voltage 3kV)
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