◆GaAs photodiode ◆Semiconductor optical sensor based on GaAs ◆Sensitive from 400 to 850 nm
This is a semiconductor optical sensor based on GaAs that generates photocurrent when incident light enters the active area. It generally has sensitivity from 400 to 850 nm. 【Photodiode Array】 FCI-GaAs-XXm is a GaAs PIN photodetector array designed for high-speed fiber receivers and application monitors, consisting of 4 to 12 elements. ● Specifications [Model Name: Active Area, Responsivity, Capacitance, Dark Current, Maximum Reverse Voltage, Maximum Forward Current, Bandwidth, Breakdown Voltage, Package] - FCI-GaAS-4M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-4M - FCI-GaAS-12M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-12M
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【Diode Amplifier Hybrid】 The FCI-H125/250G-GaAs-100 series is a compact high-speed GaAs photodetector equipped with a high-range transimpedance amplifier with an active area size of 100μm. ● Specifications [Model Name: Active Area, Supply Voltage, Supply Current, Operating Wavelength, Responsivity, Transimpedance, Sensitivity, Bandwidth, Low Frequency Cutoff, Differential Output] - FCI-H125G-GaAs-100: 100μm, +3 to +5.5V, 26mA, 0 to +70°C, 650-860nm, 1700V/M, -17dBm, 2800 Ω, -17dBm, -26dBm, BER 10-10 PRBS27-1, 900 MHz -3dB, 45 kHz -3dB, 250 mV p-p, -3dBm - FCI-H250G-GaAs-100: 100μm, +3 to +5.5V, 35mA, 0 to +70°C, 650-860nm, 1650V/M, -17dBm, 2800 Ω, -17dBm, -22dBm, BER 10-10 PRBS27-1, 1700 MHz -3dB, 30kHz -3dB, 400mV p-p, -3dBm
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