Achieves power handling of up to 40GHz and up to 50W (5A/1000V). Accurate measurement of RF high-power devices is possible.
○ Fusion of the latest high-frequency technology and mechanical performance ○ Adoption of special materials with excellent power handling ○ Design suitable for characteristic evaluation of various high-power devices represented by GaN (gallium nitride) and SiC (silicon carbide) ○ Robust probe tip ○ Uniform flatness and stable contact
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basic information
- Frequency: Maximum 40GHz - Power Rating: 500W (1GHz) / 200W (10GHz) / 100W (40GHz) - Current Rating: 10A - Voltage Rating: 500V - In addition to optimizing the probe tip size to match the device pad size, it ensures high precision flatness and possesses excellent springiness, achieving stable contact between the probe and the device. - This robust probe tip also has excellent impedance characteristics, enabling measurements at high frequency ranges. To ensure accurate measurements of the device, the probe can be precisely calibrated using a dedicated calibration board.
Price information
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Applications/Examples of results
High Power Device Measurement
Company information
Since our establishment in 1991, our probes have been adopted by many companies and research institutions both domestically and internationally for development and mass production applications. To meet various customer demands with domestic production and short delivery times, our team of probe designers, simulation engineers, mechanical engineers, and measurement engineers is involved in the design, manufacturing, and measurement of probes and calibration boards. We welcome requests for standard products, custom products, development items, and other unique items that do not currently exist in the market.
