Stronger and device-friendly SiC semiconductors than Si.
Monozukuri (Saitama University Research Seed Collection 2025-27 p.50)
SiC semiconductor, metal-oxide-semiconductor (MOS) junction device, power device, hard electronics, quantum effect device.
Silicon carbide (SiC) can form a SiO2 film on its surface through thermal oxidation, and with the mass production of 8-inch wafers and the development of device fabrication technology, it is a semiconductor material that is as easy to apply in devices as Si semiconductors. Additionally, it possesses properties similar to diamond, such as wide bandgap, high radiation resistance, high thermal resistance, and robustness. SiC truly is a material that takes the best of both Si and C (diamond)! Furthermore, recent research over the past few years has revealed that SiC contains single defects similar to diamond NV centers, which can be utilized as single photon sources or spins, opening up pathways for applications in quantum computing, quantum photonics, and quantum sensing.
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Yasuto Hijikata, Associate Professor Graduate School of Science and Engineering, Department of Mathematical and Electronic Information, Field of Electrical and Electronic Physics 【Recent Research Themes】 ● Development of quantum effect devices using single photon/spin sources in SiC semiconductors ● Development of super-resolution imaging technology utilizing quantum light sources ● Control of physical properties at the SiC/oxide interface and elucidation of the SiC oxidation mechanism ● Development of ultra-radiation-resistant electronics using SiC semiconductors
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【Appeal Points to the Industry】 ● Developed a unique SiC oxidation model, enabling the prediction of MOS interface physical properties. ● Invented a non-destructive and non-invasive SiC semiconductor evaluation technology using light as a probe. ● Developed a switching device (MOSFET) with high radiation resistance of 10 mega gray (100 to 1000 times that of conventional Si devices) using SiC semiconductors. ● Generating single photon sources/spins within SiC semiconductors and developing quantum effect devices leveraging the device compatibility of SiC. ● Developing a new imaging method utilizing light with quantum properties. 【Examples of Practical Applications, Use Cases, and Utilization】 ● Prototype of a single photon LED using a SiC MOS interface single photon source. ● Formation of nitrogen-vacancy centers and Si vacancy spin defects in SiC crystals. ● Development of defect reduction technology for SiC MOS junction interfaces. ● Achievement of 10 mega gray gamma-ray irradiation resistance in SiC MOSFETs.
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The Saitama University Open Innovation Center is a center that functions as a liaison office for industry-academia-government collaboration. It consists of three departments: the Industry-Academia-Government Collaboration Department, the Intellectual Property Department, and the Startup Support Department, each staffed with coordinators well-versed in various fields. The center's activities include solving technical challenges in companies, supporting the implementation of joint research, and conducting technology transfer aimed at introducing and utilizing Saitama University's intellectual property.