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  6. Achieving high performance in optoelectronic devices using semiconductor nanostructures.

Achieving high performance in optoelectronic devices using semiconductor nanostructures.

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Nanotechnology (Saitama University Research Seed Collection 2025-25 p.113)

last updated:Mar 31, 2025

埼玉大学 オープンイノベーションセンター
埼玉大学 オープンイノベーションセンター
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Keywords: Semiconductor nanostructures, high-efficiency solar cells, crystal growth, spectroscopic measurements.

We are conducting research to enhance the performance of optoelectronic devices using semiconductor microstructures at the nanometer scale (one billionth of a meter). For example, by utilizing structures called "quantum dots," which confine electrons in three-dimensional space within a very narrow region of about a dozen nanometers in a semiconductor, we can artificially adjust the energy of the confined electrons, thereby exhibiting excellent properties. By arranging numerous quantum dots within solar cells, these quantum dots can absorb light in wavelength ranges that are typically not absorbed, allowing us to efficiently convert the energy from sunlight, which has a broad spectrum, into electricity, significantly improving power generation efficiency. Such semiconductor nanostructures are expected to be applied not only in high-efficiency solar cells but also in high-brightness light-emitting devices and high-sensitivity sensors. To utilize them as actual devices, it is necessary to precisely control the shape, size, uniformity, and arrangement of the nanoscale structures and to fabricate them at high density, for which we are developing high-precision fabrication techniques for microstructures. Additionally, we are evaluating the properties of these materials using various spectroscopic measurement techniques.

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Achieving high performance in optoelectronic devices using semiconductor nanostructures.

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Shuhei Yagi, Associate Professor Graduate School of Science and Technology, Department of Mathematical and Electronic Information, Field of Electrical and Electronic Physics 【Recent Research Themes】 ● Control of physical properties of InGaAsN alloy semiconductors using superlattice structures ● Development of intermediate band solar cells using III-V semiconductor nanostructures ● Optical property evaluation of self-assembled InN/GaN quantum dots ● Growth control of nitride semiconductor nanowires and nanocolumns ● Research on thermophotovoltaic devices

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【Appeal Points to the Industry】 ● Self-organizing formation technology for hexagonal and cubic nitride (GaN, InN) nanostructures ● Development of novel solar cell materials using diluted nitride semiconductor (GaAsN, InGaAsN, GaPN) ● Development of functional semiconductor fabrication technology utilizing δ-doping techniques for trace additive elements ● Capability for electrical and optical evaluation of various semiconductor materials (narrow-gap, wide-gap) ● Track record of patent applications 【Examples of Practical Applications, Use Cases, and Utilization】 ● Subcell materials for lattice-matched high-efficiency tandem solar cells ● High-efficiency intermediate band solar cells using diluted nitride semiconductors ● Analysis of the energy structure of intermediate band materials through optical evaluation ● Fabrication of self-organized InN/GaN quantum dot two-dimensional array structures

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    InN quantum dots fabricated by molecular beam epitaxy.

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Saitama University Research Seed Collection 2025-27

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埼玉大学

埼玉大学 オープンイノベーションセンター

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The Saitama University Open Innovation Center is a center that functions as a liaison office for industry-academia-government collaboration. It consists of three departments: the Industry-Academia-Government Collaboration Department, the Intellectual Property Department, and the Startup Support Department, each staffed with coordinators well-versed in various fields. The center's activities include solving technical challenges in companies, supporting the implementation of joint research, and conducting technology transfer aimed at introducing and utilizing Saitama University's intellectual property.

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