Under the condition of total reflection, the penetration depth of X-rays is shorter than the escape depth of photoelectrons, so the detection depth of HAXPES is determined by the penetration depth of the X-rays!
Hard X-ray photoelectron spectroscopy (HAXPES) has made significant progress by enabling bulk-sensitive measurements in the hard X-ray region, whereas measurements in the soft X-ray region had been mainstream until now. On the other hand, HAXPES measurements under total reflection conditions of X-rays are also being conducted for the purpose of analyzing surface states. Under total reflection conditions, X-rays are incident at the critical angle for total reflection, which limits the depth of penetration into the material. Applying this characteristic to HAXPES allows for the analysis of bonding states of interfacial oxide layers and segregated impurities at the atomic layer level. *For more detailed information, please refer to the attached PDF document. Feel free to contact us for further inquiries.
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Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and measurement technologies along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, liquid crystals, metals, and new materials. Please feel free to contact us if you have any requests.