Successfully captured the n-buffer layer thickness and nitrogen (N) concentration using D-SIMS!
In recent years, in SiC MOSFETs, an n-buffer layer on the order of several hundred nanometers has been inserted between the n-substrate and the n-drift layer to address on-resistance issues. In the evaluation of the n-buffer layer, it is necessary to thin the n-drift layer, which is positioned above and is on the order of several micrometers, to improve depth direction resolution and to flatten its surface. We have developed a technology that provides high flatness to the surface of SiC compounds processed as thin films. As a result, we successfully captured the thickness and nitrogen (N) concentration of the n-buffer layer using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, please feel free to contact us.
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Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and measurement technologies along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, liquid crystals, metals, and new materials. Please feel free to contact us if you have any requests.
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