Strain analysis of Si wafers

The X-ray rocking curve method makes it possible to detect the strain of crystals without shape changes such as warping!

We would like to introduce our "Strain Analysis of Si Wafers." In the manufacturing process of semiconductor devices, residual stress generated during the thin grinding of wafers can lead to product failures, defects, and degradation. In this instance, we will perform mechanical polishing on Si wafers to reduce the surface crystallinity and evaluate the changes in crystallinity before and after polishing using X-ray rocking curve measurements. The X-ray rocking curve method can detect the strain of crystals without shape changes such as warping. 【Technical Overview】 ■ Rocking Curve Measurement - By fixing the detector at the angle position where diffraction occurs and rotating only the sample, the angular distribution of rotation that satisfies the diffraction condition can be measured. - The peak width and intensity of the angular distribution (rocking curve) reflect the variation in the tilt of the crystal planes, serving as an evaluation index for crystallinity. - For single crystals, small strains can be evaluated through high angular resolution measurements. *For more details, please download the PDF or feel free to contact us.

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