We support your material evaluation by assessing the outermost surface of the material using XPS (X-ray photoelectron spectroscopy).
X-ray photoelectron spectroscopy (XPS) is an essential tool in the development and quality control across various fields. Please utilize XPS for improving the performance of your products, investigating the causes of defects, and developing next-generation materials. XPS can clarify the following information by irradiating the sample's outer surface (a few nm) with X-rays and precisely analyzing the energy of the emitted photoelectrons: (1) Identification of constituent elements: A wide range of elements can be analyzed, from lithium (Li) to uranium (U). (2) Depth profiling: By combining with argon sputtering, it is possible to evaluate the elemental composition in the depth direction from the surface. This is effective for assessing film thickness and interface analysis. (3) Atmosphere-free analysis: Using special equipment, samples can be analyzed without exposure to the atmosphere. This prevents surface contamination or alteration due to atmospheric components, allowing for the acquisition of true surface information. (4) Measurement of insulators: Analysis of a wide variety of materials is possible.
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basic information
Fully automatic multifunctional scanning X-ray high electron spectroscopy device PHI GENESIS, manufactured by ULVAC, Inc. (1) Scanning microfocus X-ray source (monochromatic AlKα radiation) Minimum beam diameter ≦5μm, maximum scanning range 1400μm×1400μm, maximum output 100KW, capable of obtaining scanning X-ray excited secondary electron images. (2) High-sensitivity energy analyzer Highest energy resolution 0.48eV Highest sensitivity Large area mode ≧6,000,000 cps@1.0eV 20μm ≧400,000 cps@1.0eV 10μm ≧100,000 cps@1.0eV (3) Low-energy electron gun Acceleration voltage ≦1V, emission current ≧20μA, dual beam charge compensation allows for charge neutralization without adjustment using low-speed electrons + low-speed ions. Neutralization performance ≦0.82eV (no sensitivity specification) ≦0.85eV @ ≧90,000cps
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Applications/Examples of results
In the depth profile analysis of a 100 nm thick SiO₂ film deposited on a Si substrate, using XPS allows for a clear evaluation not only of the film thickness but also of the elemental distribution of Si and O, as well as the chemical bonding states as SiO₂. This provides important information regarding the film deposition process and the quality of the film.
Company information
Daitō Analysis Research has been advancing the establishment of an advanced think tank based on highly reliable analysis and analytical techniques accumulated in various material fields, as well as the challenges received from a wide range of industry customers. We aim to solve our customers' various issues with the least cost and the shortest delivery time. Moving forward, we would like to support our customers' research and development using the latest equipment and advanced manpower, and assist in creating products that enrich the future.
![[Analysis Case] Evaluation of Composition and Bonding State of GaN Film by XPS](https://image.mono.ipros.com/public/product/image/505/2000246667/IPROS5065016759361245848.jpg?w=280&h=280)
![[Analysis Case] Chemical State Analysis of Metal Elements on the Sample Surface Due to Heating](https://image.mono.ipros.com/public/product/image/cec/2001177431/IPROS14995698183983613339.jpeg?w=280&h=280)
