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Analytical Equipment - メーカー・企業266社の製品一覧とランキング

更新日: 集計期間:Oct 15, 2025~Nov 11, 2025
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Analytical Equipmentのメーカー・企業ランキング

更新日: 集計期間:Oct 15, 2025~Nov 11, 2025
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  1. 一般財団法人材料科学技術振興財団 MST Tokyo//Testing, Analysis and Measurement
  2. ライフィクスアナリティカル Osaka//Pharmaceuticals and Biotechnology
  3. null/null
  4. 4 ビーエルテック Tokyo//Testing, Analysis and Measurement
  5. 5 サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement

Analytical Equipmentの製品ランキング

更新日: 集計期間:Oct 15, 2025~Nov 11, 2025
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  1. Nanoparticle analysis device "TaylorSizer" ライフィクスアナリティカル
  2. iCAP PRO Series ICP Emission Spectrometer サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K.
  3. Sake FT-IR component analysis device "OenoFoss2"
  4. 4 Alcohol analysis device for sake Alcolyzer3001 SAKE
  5. 5 Laser Ablation ICP-MS System サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K.

Analytical Equipmentの製品一覧

226~240 件を表示 / 全 1224 件

表示件数

[Analysis Case] Evaluation of Damage Layer on Polymer Surface Due to Ion Irradiation

By using GCIB (Ar cluster), it is possible to evaluate the composition and thickness of the damaged layer.

By irradiating the surface of polymer materials with ions, changes in surface properties occur. Utilizing these changes, research is being conducted in a wide range of fields, including the development of functional materials. Evaluating the changes that occur in the surface state after ion irradiation is important for efficient research and development. In TOF-SIMS analysis, using a GCIB (Gas Cluster Ion Beam) for the sputtering ion beam makes it possible to evaluate the composition and thickness of the damage layer caused by ion irradiation on the surface of polymer materials.

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[Analysis Case] Depth Direction Analysis of Thin Carbon Films

Depth-direction analysis of diamond-like carbon (DLC) and graphene is possible.

TOF-SIMS allows for the acquisition of mass spectra in the depth direction, enabling the analysis of components in very thin layers through qualitative assessment of each layer. In this case, we analyzed a hard disk in the depth direction. As a result, it was found that the diamond-like carbon (DLC) layer formed on the surface has a two-layer structure, with a nitrogen-containing C layer on the surface side and a layer consisting solely of C on the deeper side. This method can also be applied to the depth analysis of graphene films. Measurement method: TOF-SIMS Product fields: Electronic components, manufacturing equipment, parts Analysis objectives: Composition evaluation, identification, composition distribution evaluation For more details, please download the materials or contact us.

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[Analysis Case] Evaluation of the sp2/(sp2+sp3) Ratio of DLC Films

Evaluation of the sp2/(sp2+sp3) ratio using C1s waveform analysis.

Due to its characteristics such as high hardness and high wear resistance, DLC (diamond-like carbon) films are utilized in a wide range of fields. These films are materials that lie between graphite and diamond, and the separation of sp2 (graphite structure) and sp3 (diamond structure) within the film to obtain the sp2/(sp2+sp3) ratio is one of the important factors that determine the properties of the film. Here, we will introduce an example of evaluating this sp2/(sp2+sp3) ratio by analyzing the C1s spectrum using XPS.

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[Analysis Case] Evaluation of Work Function After Thin Film Surface Treatment

UPS analysis after surface plasma treatment of ITO.

In semiconductor devices, their performance is greatly influenced by the combination of work functions of various materials that make up the device. Therefore, attempts have been made to control the work function through surface treatments and modifications, and it is important to verify their effects. This document presents an example of evaluating the change in work function of ITO (Sn-doped In2O3), used as an electrode material in organic ELs and solar cells, before and after surface plasma treatment using UPS analysis.

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Comparison of depth profiling analysis using XPS and AES.

XPS: X-ray Photoelectron Spectroscopy AES: Auger Electron Spectroscopy

XPS and AES are surface-sensitive analytical techniques widely used for evaluating sample surfaces, but by combining them with ion etching, depth profiling analysis becomes possible. When conducting depth profiling analysis, it is important to appropriately differentiate between XPS and AES according to the area to be measured and the material of the sample in order to perform analysis that aligns with the objectives. The characteristics of depth profiling analysis using XPS and AES will be compared using the analysis of SUS passive films as an example.

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[Analysis Case] Composition Evaluation and Morphological Observation of Fuel Cell Catalyst PtRu

Multifaceted evaluation using XPS, SEM, and TEM.

The electrodes of fuel cells have a structure in which catalyst particles are supported on a carbon carrier. Evaluating the state of the carrier and catalyst particles is essential for understanding degradation mechanisms and considering design guidelines. XPS analysis is effective for assessing the state of catalyst poisoning (oxidation). Additionally, SEM and TEM observations are effective for evaluating catalyst agglomeration and particle growth. By combining multiple analytical methods, we propose a multifaceted evaluation.

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[Analysis Case] Surface Contamination Assessment of Si Wafers Stored Using TOF-SIMS

Evaluation of contamination and oxidation of Si wafers after removing the oxide film with hydrofluoric acid treatment.

Knowledge about the effects of contamination and oxidation during sample transport is important in surface analysis where the detection depth is on the nanometer order. Therefore, we examined the impact of contamination and oxidation due to differences in storage methods on Si wafers. In storage with wrapping paper and aluminum foil, there is a tendency for the peaks of organic materials caused by secondary contamination to be weaker. When samples are wrapped and stored in the matte side of aluminum foil during storage and transport, it can suppress contamination and oxidation compared to other storage methods.

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[Analysis Case] Thermal Desorption Gas Analysis of SiN Film by TDS

It is possible to evaluate the surface-adsorbed gas on the thin film and the desorbed gas from within the film.

The TDS analysis results regarding the SiN film on the Si substrate are presented. In the low-temperature range up to around 100°C, there is little desorption, indicating that there were few adsorbed components on the surface of the sample. On the other hand, as the temperature of the sample increases, it can be observed that m/z 2 (H2), m/z 18 (H2O), and m/z 27 (C2H3: organic fragment components) are being desorbed. TDS analysis conducted under high vacuum (1E-7 Pa) is effective for evaluating the adsorbed gas components on the film surface and trace gas components within the film.

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Differences in detected components by ionization methods ESI and APCI.

LC/MS: Liquid Chromatography-Mass Spectrometry

The ionization method for LC/MS is commonly ESI (Electrospray Ionization). In ESI, if low-polarity components cannot be ionized, APCI (Atmospheric Pressure Chemical Ionization) is available as a highly sensitive detection method. It is important to choose the optimal ionization method according to the target components in order to obtain data that aligns with the objectives.

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About MSDM

TOF-SIMS: Time-of-Flight Secondary Ion Mass Spectrometry

In depth profiling analysis using TOF-SIMS, if the positional information on the plane (x, y) is ignored, mass spectra exist at each depth (z), resulting in three-dimensional data of depth, mass, and spectral intensity. The visualization of this three-dimensional data as a single image is called MSDM (Mass Spectra Depth Mapping) representation.

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[Analysis Case] Degradation Analysis of Organic EL Devices Using MSDM

By visualizing the mass spectrum, more accurate analysis is possible.

Organic EL (OLED) is used in various applications such as high-definition display panels and lighting, and the demand for layer structure analysis and degradation analysis is increasing. However, since it is formed by combining various organic materials, elemental analysis alone can only capture a portion of the phenomena. This document presents a case study where depth direction analysis data of OLED was obtained using TOF-SIMS, and insights into the degradation of the sample were gained through MSDM (Mass Spectra Depth Mapping).

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[Analysis Case] Analysis of Paper Coated with Dyes and Pigments

Visualization of molecular information derived from dyes and pigments is possible using TOF-SIMS.

Color printers use ink to print on the surface of paper. The ink contains dyes and pigments, which have characteristic molecular information based on their colors. By visualizing this molecular information, it becomes possible to obtain information about the distribution of ink components on the paper surface and how deeply the ink components penetrate into the paper cross-section. Below, I will summarize the "imaging results of the paper surface" visualized by TOF-SIMS. TOF-SIMS can perform image analysis of molecular information ranging from 10 μm to 3 cm square.

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Pre-treatment methods for trace element analysis on the wafer surface.

ICP-MS: Inductively Coupled Plasma Mass Spectrometry

In the process of confirming metal contamination adhered to the wafer surface after the formation of the SiO2 film, a method has traditionally been used where the SiO2 film is dissolved in acid as a pre-treatment for analysis, followed by the analysis of the solution. This method results in analysis that combines metal contamination on the very surface with that within the SiO2 film, making it unsuitable for analyzing only the metal contamination on the very surface. In MST, it is possible to evaluate the metal contamination elements on the wafer's very surface by dissolving only the metal elements adhered to the very surface without dissolving the SiO2 film during the pre-treatment.

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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in SiC Using SIMS

Evaluates bulk concentrations at the ppb to ppt level.

In the development of ultra-high voltage, low-loss SiC power devices that can be used in substations, controlling low carrier concentration is necessary, and SIMS analysis is effective for evaluating extremely low concentrations of impurities. In SIMS analysis, it is possible to evaluate extremely low concentrations by limiting the impurities to one element without simultaneously acquiring multiple elements. This document presents analysis examples that evaluate the extremely low concentration range of impurities in SiC with ultra-high sensitivity, which has been difficult to assess conventionally.

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[Analysis Case] Evaluation of the Condition of Foreign Matter with Surface Oxidation Film

Evaluation of aluminum hydroxide Al(OH)3 and aluminum oxide Al2O3 is possible.

If you want to qualitatively evaluate metallic foreign substances, analyzing only the very surface may result in information about the oxide film present on the surface of the foreign substance, and you may not obtain information about the foreign substance itself. By performing depth analysis using TOF-SIMS, it is possible to evaluate the composition and state of the foreign substance located deeper than the oxide film. This document presents case studies evaluating the state of three locations that are believed to contain aluminum-based foreign substances.

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