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MOSFET(オン抵抗) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Aug 20, 2025～Sep 16, 2025
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MOSFET Product List

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ICE20N60B 20A, 600V POWER MOSFET

ICE20N60B 20A, 600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management and energy saving, with a proven track record in power supply manufacturers.

The ICE20N60B from Ice Moss Technology is a TO263-2L, D2PAK package rated for 20A and 600V. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

  • Transistor

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High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!

Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.

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Super Junction MOSFET

Super Junction MOSFET

Power MOSFET with a high voltage rating of over 600V! This device features low on-resistance and ultra-low gate charge using MEMS technology.

The "Super Junction MOSFET" is our power MOSFET that utilizes high-voltage super junction technology. By combining silicon MOSFETs with MEMS process technology, we deliver world-class best-in-class performance. We have developed unique manufacturing technology using MEMS technology, and by expanding to smaller dimensions, we provide high-performance and cost-effective MOSFETs. 【Features】 ■ High voltage resistance of over 600V ■ High dv/dt resistance ■ High avalanche characteristics ■ High peak current characteristics ■ Enhanced mutual conductance characteristics, etc. *For more details, please download the PDF or contact us.

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ICE15S60FP 15A,600V POWER MOSFET

ICE15S60FP 15A,600V POWER MOSFET

GEN2 Series 15A, 600V GEN2 Super Junction MOSFET

The ICE15S60FP from IceMOS Technology is a TO220 Full Pak package rated for 15A and 600V. It has a low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor

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ICE25S65FP 25A,650V POWER MOSFET

ICE25S65FP 25A,650V POWER MOSFET

GEN2 Series 25A, 650V TO220 FullPak Package

The ICE25S65FP from IceMOS Technology is a TO220 Full Pak package rated for 25A and 650V. It has low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance

  • Transistor

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ICE20N60FP 20A,600V Power MOSFET

ICE20N60FP 20A,600V Power MOSFET

★In stock! Same-day shipping available! This power MOSFET contributes to power management energy savings and has a proven track record with power supply manufacturers.

The ICE20N60FP from Ice Moss Technology is a full-pack device rated for 20A and 600V. 【Features】 ■ TO220 Fullpak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance * For more details, please refer to the PDF document or feel free to contact us. * An English version of the catalog is available for download.

  • Transistor

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MOSFET R9 Series

MOSFET R9 Series

High-reliability MOSFETs (Hermetic MOSFETs) for aerospace and defense equipment, and radiation-resistant MOSFETs for space equipment.

We offer a wide variety of discrete products in different package types for defense, aerospace, and space equipment, tailored to your applications and specifications. Features of the R9 Series - Released the R9 series utilizing Super Junction Technology - Significant improvement in performance metric FoM (on-resistance RDSON × charge Qg) - Enhanced resistance to Single Event Effects (SEE) - Packages include surface mount (SMD-0.2, SMD-0.5, SMD-2) and through-hole (TO-254, TO-257), as well as support for SupIR SMD-2 *Comparison [Conventional Products] [R9 Series] - RDS(ON) = 30 (mΩ) - RDS(ON) = 18 (mΩ) - Qg = 45 (nC) - Qg = 45 (nC) - ID = 22 (A) - ID = 40 (A) *For more details, please refer to the catalog or feel free to contact us.

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ICE8S65FP 8A,650V POWER MOSFET

ICE8S65FP 8A,650V POWER MOSFET

Mass production release starting January 2023! GEN2 Super Junction MOSFET

The ICE8S65FP from Ice Moss Technology is an 8A, 650V TO220 Full Pak package. It has low Qg and contributes to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt resistance ■ High UIS characteristics ■ High peak current resistance ■ Enhanced mutual conductance performance

  • Transistor

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200V Ultra Junction X4 Class MOSFET

200V Ultra Junction X4 Class MOSFET

Heat design is simplified, allowing for higher efficiency.

The "200V Ultra Junction X4 Class MOSFET" is a low RDS(on) MOSFET suitable for high-efficiency applications. This product is available in TO-220, TO-247-3L, TO-263, and TO-268HV packages, with a nominal rated current of 60 to 220A. Please feel free to contact us if you have any requests. 【Benefits】 ■ Reduced conduction loss due to low on-resistance RDS(on) ■ Simplified thermal design due to low thermal resistance RthJC ■ High surge tolerance provided by high avalanche energy capacity EAS ■ Reduced gate driver requirements due to decreased gate charge Qg *For more details, please download the PDF or feel free to contact us.

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SiC MOSFET『FMG50AQ120N6』

SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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