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Simulator Product List and Ranking from 45 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

Simulator Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. タナック 岐阜本社 Gifu//Medical and Welfare
  3. アイロック 本社 Aichi//Automobiles and Transportation Equipment
  4. 4 Comet Technologies Japan K.K. Comet Yxlon Kanagawa//Testing, Analysis and Measurement
  5. 5 エムティエスジャパン Tokyo//Testing, Analysis and Measurement
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Simulator Product ranking

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. Factory Layout Simulator
  2. X-ray reflow simulator Comet Technologies Japan K.K. Comet Yxlon
  3. [Case Study] Toyota Motor Corporation Driving Simulator エムティエスジャパン
  4. 4 T3R simulator アイロック 本社
  5. 5 [Demo unit available] LED Solar Simulator LumiSun-50 オプトシリウス

Simulator Product List

226～240 item / All 388 items

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Crosslight LED simulator

Crosslight LED simulator

Analysis tool for the effects of polarization charge in blue light-emitting diodes and optimization of device structure.

Various physical models. (k.p. theory based on a multiple quantum wells model according to the urtz mineral materials. Polarization surface charge/self-consistent model. Many-body gain/spontaneous emission theory for quantum wells or quantum dots. Non-equilibrium quantum transport model.) Comparison of the presence or absence of the effect of polarization charge in the characteristics of InGaN/GaN MQW blue LEDs. (Band diagram, EL spectrum, I-V curve, internal quantum efficiency (IQE)). Additionally, consideration of structural optimization. (Dependence on indium composition, dependence on the number of quantum wells, dependence on the thickness of the quantum well/barrier layer.)

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3D device simulator for multi-quantum well LEDs with surface structures.

3D device simulator for multi-quantum well LEDs with surface structures.

3D analysis tool for InGaN/GaN MQW LEDs with surface structures.

Constructing 3D structured devices with the process simulator CSuprem. Introducing the modeling procedure for textured surfaces using a combination of APSYS and FDTD. Calculating electrical and optical properties using APSYS and 3D ray tracing (performing 3D ray tracing with FDTD data to extract optical power). By combining several modules of the Crosslight software, it is possible to accurately calculate LEDs with surface structures.

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3D simulator of quantum dot devices

3D simulator of quantum dot devices

3D analysis tool for quantum dot devices

Modeling of quantum dot devices involves constructing and analyzing microscopic models and incorporating the results into macroscopic models. The microscopic models can consist of various rectangular or cylindrical three-dimensional quantum dots. The strain effect is also taken into account. The wurtzite structure of GaN substrates can be applied similarly to the zincblende structure. Examples include the band diagram in the macroscopic model, comparison of calculated PL results with experimental results, optical gain spectrum, spectrum without broadening, temperature dependence, gain spectra, and lasing behavior.

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VCSEL simulator

VCSEL simulator

Analysis tool for vertical-cavity surface-emitting lasers.

Overview of the self-consistent model in the PICS3D integrated VCSEL module. Explanation of basic VCSEL modeling. Additionally, features such as the automatic VCSEL cavity design module, optically pumped VCSEL, multi-lateral models calculation, resonating wavelength of multimode using the effective index method (EIM), non-symmetric VCSEL, rectangular shape VCSEL, multimode transient simulation, and vertical external cavity surface emitting laser (VECSEL) are introduced.

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3D simulator of photonic crystal laser

3D simulator of photonic crystal laser

3D analysis tool for photonic crystal semiconductor lasers

Crosslight's 3D TCAD integrates an FDTD and electro-optical simulation environment for photonic crystal semiconductor laser (PhCLD) analysis. Crosslight's 3D TCAD is a tool for designing and optimizing electrically pumped PhCLDs. The user-friendly and practical GUI covers everything from the original GDSII layout to the final simulation of laser emission characteristics.

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Device simulator for Mach-Zehnder type optical modulator

Device simulator for Mach-Zehnder type optical modulator

Analysis tool based on a physical model of a Mach-Zehnder type optical modulator with multiple quantum wells on an InP substrate.

The simulation of Mach-Zehnder type optical modulators requires everything from microscopic quantum well models to waveguide and circuit models related to the system. Crosslight provides integrated cutting-edge solutions for the design of Mach-Zehnder type optical modulators. The materials introduce various physical and mathematical models and explain examples of actual modeling.

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Device simulator for type II quantum well photodetectors.

Device simulator for type II quantum well photodetectors.

Analysis tool for optical detection devices with Type II quantum well structure.

Introducing applicable models and functions. (A technique that bundles 150 pairs of Type-II MQW using input commands. Deriving the optical gain spectrum of Type-II quantum wells from the optical gain model of Complex MQW. Designing the absorption spectrum based on the band alignments of Type-II quantum wells. The effects of a mini-band model based on quantum mechanics.)

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Avalanche photodiode device simulator

Avalanche photodiode device simulator

Avalanche Photodiode Analysis Tool

Introducing the physical model of APSYS used in the simulation of APDs (Avalanche Photodiodes). (Drift-diffusion and hydrodynamic models. Impact ionization and excess noise factors. Resonant condition.) Additionally, an overview of the modeling and analysis results of APD devices is provided. (Modeling of InP/InGaAs SAGCM APD. Modeling of InGaAs/AlGaAs RCE SAGCM APD. Hot carrier model of GaAs/AlGaAs PIN APD.)

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Nano-sized GaN HEMT simulator

Nano-sized GaN HEMT simulator

GaN HEMT device analysis tool

Explanation of the physical model used for analyzing APSYS's field-effect transistor (FET) devices. Introduction of the quantum ballistic current transport model. Comparison of simulation results for GaN HEMT using the Non-Equilibrium Green's Function (NEGF) method and the drift-diffusion equation in APSYS. The results from NEGF are similar to the experimental results in terms of the shape of the I-V characteristics.

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HEMT simulator

HEMT simulator

Analysis tools in HEMT simulation

Simulation and explanation of the issues of piezoelectric polarization, nucleation layer, and semi-insulating traps in GaN/AlGaN HEMTs, hot carrier trapping in GaN/AlGaN HEMTs, and impact ionization effects in InGaAs HEMTs using specific devices.

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3D simulator for SiC MESFET

3D simulator for SiC MESFET

3D device analysis tool for SiC MESFET.

Introducing the key points of the flow from mask pattern design using MaskEditor, process simulation with CSuprem, to device simulation with APSYS. Additionally, the calculation results are graphically plotted to illustrate the points of analysis and characteristics.

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High Voltage MOSFET 2D/3D Simulator

High Voltage MOSFET 2D/3D Simulator

High-voltage MOSFET 2D/3D device analysis tool

Introducing 2D/3D simulations using High Voltage MOSFETs as the subject. Content: Overview of the process simulator CSuprem and the device simulator APSYS models, explanation of process simulation, analysis of the breakdown of 300V LDMOS, 3D simulation of floating gates, and 3D simulation of hybrid IGBTs.

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Power semiconductor simulator

Power semiconductor simulator

Examples of semiconductor device design and the use of TCAD software for cross-light.

Introducing the details of each Crosslight product based on case studies. Explaining Crosslight's Auto TCAD.

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Gun diode simulator

Gun diode simulator

Tool for modeling and analyzing GaN diodes.

Explanation of the device modeling and simulation analysis results of the Gunn Diode. Demonstration of self-oscillation in the Gunn Diode. Transient simulation with perturbations is key to observing effects. The inhomogeneous carrier/electric field profile is crucial for self-oscillation. Since transient mobility diffusion is not modeled as stochastic noise, perturbations should be defined by the user.

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Three-dimensional simulator for thin-film transistors

Three-dimensional simulator for thin-film transistors

3D analysis tool for thin-film transistors

This introduces an overview of 3D calculations using the process simulator CSuprem and the device simulator APSYS. It includes pattern creation using MaskEditor, process simulation based on this pattern, and device simulation of the electrical and optical characteristics of thin-film transistors (TFT) based on the results of the process simulation, along with the display of the results plot.

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