Hydrogen Getter "REL-HY&HCRH"
By selectively adsorbing hydrogen, we solve problems related to hydrogen!
Using Pd or Pt as gate materials, the degradation caused by hydrogen in sealed packages containing gallium arsenide (GaAs) discrete FETs is a well-known phenomenon. The noble metal of the gate converts H2 molecules into H2 atoms, which then diffuse into the semiconductor material, leading to a reduction in current and device gain. Saes Group's hydrogen removal film, Rel-Hy, is a state-of-the-art getter solution. It is optimized to fully meet the very stringent requirements of microelectronic sealed packages suffering from hydrogen-related issues. Phenomena such as gate failures in gallium arsenide-based microelectronic devices caused by hydrogen, or degradation of insulation in ultra-adiabatic low-temperature systems, can be resolved by introducing getters that can selectively adsorb gases. Through Rel-Hy, Saes Getters provides getter solutions with excellent performance to the market, fully accommodating sealed packages such as those mentioned below.
- Company：サエス・ゲッターズ・エス・ピー・エー 日本支店
- Price：Other
