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SICMOSFET Product List

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SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!

Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.

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Sic SiC MOSFET

With low on-resistance and approximately 10 times the voltage withstand strength of silicon, it demonstrates excellent power performance!

We would like to introduce the "Sic SiC MOSFET" that we handle. It is a MOSFET with an insulated gate structure, designed similarly to silicon MOSFETs, yet achieving higher voltage resistance and excellent thermal conductivity. It features high speed and robustness, enabling compact and low-cost high-efficiency system designs. Systems using SiC MOSFETs achieve higher performance and efficiency compared to traditional silicon-based systems. 【Benefits】 ■ Supports high-frequency switching, maximizing performance and efficiency ■ Stable operation even in high-temperature environments ■ Miniaturization of peripheral components (inductors, filters, etc.) enables overall system miniaturization *For more details, please download the PDF or feel free to contact us.

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