HEMT simulator
Analysis tools in HEMT simulation
Simulation and explanation of the issues of piezoelectric polarization, nucleation layer, and semi-insulating traps in GaN/AlGaN HEMTs, hot carrier trapping in GaN/AlGaN HEMTs, and impact ionization effects in InGaAs HEMTs using specific devices.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
