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We are developing wafers that can accommodate MOCVD epitaxial growth on GaN, Sapphire, and SiC substrates. These wafers can be used for various applications, including high-frequency devices, power devices, and lighting. Please feel free to contact us if you have any requests. 【Features】 ■ Low defect density ■ Surface flatness ■ Large area expansion of 4 inches or more is possible *For more details, please feel free to inquire.
