Supports ELO (epitaxial lateral overgrowth) as well!
We are developing wafers that can accommodate MOCVD epitaxial growth on GaN, Sapphire, and SiC substrates. These wafers can be used for various applications, including high-frequency devices, power devices, and lighting. Please feel free to contact us if you have any requests. 【Features】 ■ Low defect density ■ Surface flatness ■ Large area expansion of 4 inches or more is possible *For more details, please feel free to inquire.
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【Other Products】 ■Devices *For more details, please feel free to contact us.
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Our company is engaged in the development, manufacturing, and sales of next-generation gallium nitride (GaN) devices. The GaN semiconductor electronic devices we are working on possess excellent characteristics in energy efficiency, compactness, high temperature resistance, and radiation resistance, and are recognized as essential devices for the future society. GaN semiconductor electronic devices will dramatically enhance the power conversion efficiency in power electronics and contribute to the realization of an energy-saving society. Please feel free to contact us if you have any inquiries.