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Introducing the features of Crosslight's TCAD and 3D simulation. Additionally, explaining the characteristics of MaskEditor and SemiCrafter, which are tools for constructing 3D structures. To conduct actual simulations, an overview of the CMOS image sensor process is provided, along with explanations of the tasks for each step.

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Introducing applicable models and functions. (A technique that bundles 150 pairs of Type-II MQW using input commands. Deriving the optical gain spectrum of Type-II quantum wells from the optical gain model of Complex MQW. Designing the absorption spectrum based on the band alignments of Type-II quantum wells. The effects of a mini-band model based on quantum mechanics.)

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Crosslight's APSYS can provide a comprehensive physical model for the analysis of QWIP (Quantum Well Infrared Photodetectors) devices. The validity of the model is sufficiently reasonable when compared to experimental results. Non-local quantum corrections to the drift-diffusion theory are necessary to explain the photo-carrier extraction in the properties of QWIPs.

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Introducing the physical model of APSYS used in the simulation of APDs (Avalanche Photodiodes). (Drift-diffusion and hydrodynamic models. Impact ionization and excess noise factors. Resonant condition.) Additionally, an overview of the modeling and analysis results of APD devices is provided. (Modeling of InP/InGaAs SAGCM APD. Modeling of InGaAs/AlGaAs RCE SAGCM APD. Hot carrier model of GaAs/AlGaAs PIN APD.)

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Modeling of quantum dot devices involves constructing and analyzing microscopic models and incorporating the results into macroscopic models. The microscopic models can consist of various rectangular or cylindrical three-dimensional quantum dots. The strain effect is also taken into account. The wurtzite structure of GaN substrates can be applied similarly to the zincblende structure. Examples include the band diagram in the macroscopic model, comparison of calculated PL results with experimental results, optical gain spectrum, spectrum without broadening, temperature dependence, gain spectra, and lasing behavior.

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Overview of the self-consistent model in the PICS3D integrated VCSEL module. Explanation of basic VCSEL modeling. Additionally, features such as the automatic VCSEL cavity design module, optically pumped VCSEL, multi-lateral models calculation, resonating wavelength of multimode using the effective index method (EIM), non-symmetric VCSEL, rectangular shape VCSEL, multimode transient simulation, and vertical external cavity surface emitting laser (VECSEL) are introduced.

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The temperature dependence of the mechanism of refractive index change using the Kramers-Kronig equations and the free electron/plasma model yields reasonable results. LASTIP provides an accurate estimate of the transverse mode behavior in SCOWL-type high-power lasers. For more in-depth analyses, such as those involving long resonators, it is recommended to use PICS3D, as it is necessary to consider longitudinal spatial hole burning and facet optical damage effects.

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Subband structure calculation enables the fundamental design of quantum cascade lasers (QCL), such as emission wavelength and miniband alignment. A microscopic rate equation model easily generates optical gain, such as local current and photon density. In macroscopic QCL simulations, electrons are injected from the electrodes into the multiple quantum wells (MQW) and collected from the MQW back to the electrodes. A non-local current injection model is proposed with a mean-free-path of 100-1000 Å.

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Introducing a modeling approach that considers crystal coordinate systems, strain, and stress. Using 2D calculations in LASTIP as an example, comparing optical gain without internal electric fields between semi-polar, non-polar, and c-plane. A model based on k.p. theory for wurtzite-type MQW devices considering crystal growth direction is implemented in APSYS, LASTIP, and PICS3D.

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Crosslight's 3D TCAD integrates an FDTD and electro-optical simulation environment for photonic crystal semiconductor laser (PhCLD) analysis. Crosslight's 3D TCAD is a tool for designing and optimizing electrically pumped PhCLDs. The user-friendly and practical GUI covers everything from the original GDSII layout to the final simulation of laser emission characteristics.

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Simulation of the emission characteristics, electrical characteristics, and thermal analysis of multimode interference (MMI) semiconductor lasers. Introduction of the physical model. Explanation of the simulation procedure from mask creation to three-dimensional simulation. Discussion of considerations to be taken into account in the design of MMI devices.

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APSYS can provide various models related to the efficiency degradation of LEDs. (Potential strain in quantum wells and barriers due to polarization charge. Cold carrier leakage across quantum barriers and electron blocking layers. Non-local transport due to hot carriers. Non-local hot Auger electron leakage via thermionic emission (Auger-thermionic model). Non-local direct escape from quantum wells dependent on Auger recombination rate (Auger-direct model). Hot carrier non-local emission from quantum barriers dependent on Auger recombination rate (Auger-indirect model).)

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Two types of LED device structures with different surface shapes were simulated using the FDTD method in APSYS, resulting in an angle-dependent light intensity distribution. The differences in surface shape are reflected in the light intensity. A 3D structure can be simulated using the same method as in 2D.

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This introduces the analysis of multi-quantum well (MQW) structure LEDs using TCAD, which integrates the process simulator (CSuprem) and the device simulator (APSYS). It simulates potential, current density, temperature, and carrier distribution, displaying the results in 3D. The LayerBuilder (standard included), which has a GUI interface, is used to set the device cross-sectional structure. Layout patterns such as electrodes are created using MaskEditor (standard included), which supports GDS format. Based on this information, a 3D mesh and doping profile are generated with CSuprem. The device simulator (APSYS) simulates electrical characteristics (such as IQE) and thermal properties. Additionally, using the optional feature Optowizard, light extraction via ray tracing or FDTD is possible.

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Introducing techniques for analysis procedures. Analyzing ray tracing and displaying the plots of the obtained results. (Angle distribution of LED output. Profile of absorbed power density in yellow/red phosphors. Spectrum of all light outputs.)

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Efficient analysis of GaN substrate nanowire and nanotube structures for LEDs using the device simulator (APSYS). Examples of device modeling and simulation are presented. A single nanotube with 15,000 mesh points in the quantum well was calculated as a test. The typical I-V characteristic calculation took about 20 minutes on a laptop with OS: Windows 7 and CPU: i5. The physical models and numerical analysis functions used in APSYS include "self-consistent calculations of the drift diffusion model combined with quantum mechanics," "utilization of polarization charges in polar and semi-polar forms," "thermal model," "IQE drop due to EBL doping, band offset, and polarization charges," and "extraction calculations using FDTD," among others.

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Introducing various types of analyses of RCLEDs. (Comparing experimental results using InGaAs/AlGaAs RCLED as an example. RCLED with a structure similar to VCSEL using GaAs/AlGaAs materials with multiple quantum wells (MQW). RCLED with detuned DBR. RCLED with a long resonator.) The device simulator APSYS enables an all-in-one analysis and design approach.

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Introducing 2D/3D simulations of LED devices using Crosslight's CAD product device simulator. Calculations are performed using physical models and functions such as the multi-quantum well (MQW) model, carrier transport model, and ray tracing. Simulations and analyses of band structures and IQE droop due to the presence or absence of polarization are conducted. An introduction to the design of superlattices is provided. Examples include typical 2D simulations of InGaN LEDs and complete 3D simulations of LEDs with ITO electrodes.

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Introducing various simulations of organic LEDs (Organic Light-Emitting Diodes) using the Crosslight device simulator APSYS. Quantum drift-diffusion model and analysis for organic semiconductors. Light extraction through 3D ray-tracing (non-microcavity mode). Modeling of electroluminescent spectra accompanied by Frenkel excitons. Calculations including microcavity effects. Application to active matrix organic EL (AMOLED). Analysis of white organic EL (WOLED) using a triple diffusion layer. Comparison of characteristics of low-voltage PIN structures with simulation and experimental results. Analysis of tandem organic EL (OLED).

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Explaining the model of quantum dots using LED devices as an example. Simulating the emission spectra (EL spectrum) for different sizes of quantum dots. Additionally, comparing with experimental results. Simulating the I-V characteristics with and without quantum transport, and comparing the results. Analyzing and comparing quantum efficiency. Comparing quantum efficiency and emission spectra due to differences in the density of quantum dots. Furthermore, comparing the characteristics of LED devices made with quantum dots and quantum wells.

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This introduces the points of modeling and analysis examples of photonic crystal LEDs (PhCLED). It considers simulations based on photonic crystal LEDs with DBR. (2D/3D drift-diffusion model. Band analysis through physical simulation. Spontaneous emission and guided mode. Consideration of the depth of air holes, etc.) Additionally, it presents an analysis of guided multimodes using InGaN photonic crystal LEDs. The results of these simulations are consistent with reported theories and experiments.

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Various physical models. (k.p. theory based on a multiple quantum wells model according to the urtz mineral materials. Polarization surface charge/self-consistent model. Many-body gain/spontaneous emission theory for quantum wells or quantum dots. Non-equilibrium quantum transport model.) Comparison of the presence or absence of the effect of polarization charge in the characteristics of InGaN/GaN MQW blue LEDs. (Band diagram, EL spectrum, I-V curve, internal quantum efficiency (IQE)). Additionally, consideration of structural optimization. (Dependence on indium composition, dependence on the number of quantum wells, dependence on the thickness of the quantum well/barrier layer.)

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Constructing 3D structured devices with the process simulator CSuprem. Introducing the modeling procedure for textured surfaces using a combination of APSYS and FDTD. Calculating electrical and optical properties using APSYS and 3D ray tracing (performing 3D ray tracing with FDTD data to extract optical power). By combining several modules of the Crosslight software, it is possible to accurately calculate LEDs with surface structures.

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Explanation of a theoretical model based on Green's function theory. Analysis using test devices. (Profile of lateral mode, gain, band diagram, carrier distribution under different injections, spatial hole burning, I-V characteristics, L-I curve, 3D effects on amplifier spontaneous emission.)

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This explains the theoretical model of GaN multi-quantum wells (MQW) under high stress. It is possible to obtain the following results for GaN device LEDs grown on silicon in arbitrary crystal orientations using the CrossLight device simulator. The tensile stress from the silicon substrate reduces the band gap of the multi-quantum wells (MQW) and results in a longer wavelength. There is a decrease in piezoelectric charges within the multi-quantum wells (MQW). The reduction in internal quantum efficiency (IQE) is caused by the increase in piezoelectric charges at the electron blocking layer (EBL) interface.

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Explaining the tunneling model of multiple quantum barriers (MQB) and superlattices (SL). Simulation comparison with and without superlattices (band diagram, L-I characteristics, internal quantum efficiency (IQE), electron leakage, etc.). Multiple quantum barriers increase the potential barrier for electrons and block electron leakage more effectively.

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This introduces a case study of the process simulator PROCOM for Metal-Organic Chemical Vapor Deposition (MOCVD). PROCOM provides a comprehensive model of the MOCVD process that takes into account fluid dynamics, mass transport, heat transport, and non-equilibrium gas-gas or non-equilibrium gas-surface chemical reactions. It features an integrated GUI tool that can handle geometric structures, mesh, and chemical reaction control. The rotating disk model is effective and highlights the advantages of using a rotating disk in MOCVD.

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Introducing the features of products that make up Crosslight's 3D TCAD. Actual calculation examples include devices such as Power NPN BJT, Interconnect Metal Debiasing, Power LDMOS, CMOS Image Sensor, and FINFET. Examples of device creation using the process simulator CSpurem, as well as analysis of electrical and optical characteristics and thermal analysis using the device simulator APSYS.

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CSuprem is a simulator that can immediately create MEMS (Micro-Electro-Mechanical Systems). It illustrates actual calculations using process simulations of RF switches, electrometers, polysilicon MEMS, SOI MEMS, and MT-VCSOA. It accurately optimizes the MEMS manufacturing process and generates the optimal 3D mesh for MEMS formation simulations.

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Addressing the issue of p-type conductivity using the process simulator PROCOM for Metal-Organic Chemical Vapor Deposition (MOCVD). It is important to control the incorporation of Mg during film growth. The simulation assists in optimizing the complex doping processes and the MOCVD process. Different types of acceptors can also be simulated using this software.

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Based on physical models for ion implantation, deposition, etching, diffusion, and oxidation, it is possible to perform one-dimensional, two-dimensional, and three-dimensional process simulations of various semiconductor structures. It is an indispensable and reliable accurate simulation tool for controlling research and development costs in IC manufacturing processes. It can output doping profiles for device simulators.

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MaskEditor is essentially a mask creation and editing tool for layouts. When combined with the process simulator CSuprem, it is possible to generate a three-dimensional mesh for device simulation. It can generate device layouts in GDSII format. It generates masks for 3D process simulation.

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