Si, SiC, GaN, Gallium Oxide, Diamond Power Device Technology and Industry Outlook 2026 [Web Seminar]
In order to achieve a decarbonized society, power semiconductor technology that enhances power conversion efficiency is gaining attention. This seminar will focus on the latest trends of GaN devices that contribute to the power efficiency of AI data centers, as well as the technological innovations of SiC devices expected in the EV market. In particular, GaN excels in high-frequency and high-efficiency operation, making it an essential element for next-generation power design. On the other hand, SiC for EVs is being adopted in applications such as onboard inverters due to its high voltage and low loss characteristics, even as the market is at a standstill. However, silicon power devices still reign supreme in the current landscape. This is primarily because the performance, reliability, and pricing of next-generation power devices represented by SiC/GaN have not yet sufficiently met market demands. The seminar will provide a clear and thorough explanation of the current state and future trends of new material power device development technologies, including semiconductor elements, packaging technologies, and market forecasts, in comparison to silicon power devices, which are their strongest competitors.

| Date and time | Wednesday, Jan 21, 2026 10:30 AM ~ 04:30 PM |
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| Entry fee | Charge 52,800 yen |
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