Technical Information "De-gassing Evaluation of Plating Samples (C0464)" and 4 other items published.

High-sensitivity analysis using ICP-MS.

In the solution that dissolves the SiN film (Si3N4) on the Si wafer, there is a Si matrix derived from the film in addition to the target impurity metal elements. Therefore, accurate and highly sensitive analysis cannot be performed directly on the dissolved solution itself. Thus, after dissolving the SiN film on the Si wafer, we enabled the analysis of impurity metal elements in the SiN film without the influence of the Si matrix by applying additional treatment. An example of conducting high-sensitivity analysis using ICP-MS with commercially available Si wafers with SiN films is provided.

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ICP-MS: Inductively Coupled Plasma Mass Spectrometry

The purpose of evaluating metal contamination on the surface of Si wafers using ICP-MS includes not only the contamination assessment of the Si wafers themselves but also the evaluation of contamination within semiconductor devices and the assessment of the working environment due to Si wafer exposure. Therefore, the analysis of the Si wafer surface is conducted for various purposes. ICP-MS analysis can sensitively obtain the amount of metal contamination on the surface of Si wafers, and it is also possible to specify the evaluation area according to the purpose.

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We will analyze the amino acid sequence of the peptide using LC/MS/MS analysis.

When peptides are measured using LC/MS/MS, characteristic fragment ions are obtained, allowing for the analysis of the amino acid sequence that makes up the peptide. Additionally, because peptides are separated and analyzed by LC, it is possible to analyze the sequences even in samples containing multiple peptides or impurities. Here, we present a case study where low molecular weight peptides were analyzed using LC/MS/MS, and the amino acid sequences were estimated.

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Thermal Desorption Gas Analysis of Ni/Au Plating (TDS)

If the plating film contains gas, it may cause defects such as peeling, blistering, and bubbles within the film. To investigate the gas contained in the plating film, TDS, which can measure the gas released by heating the sample in a high vacuum, is effective. The results of TDS analysis on a sample with Ni/Au plating on SUS material are presented. The release of H2, HCN, H2S, and HCl from the plating film was confirmed. Additionally, quantitative values were calculated.

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TDS: Thermal Desorption Gas Analysis Method

TDS is a method that heats samples in high vacuum (1E-7 Pa) and detects the gases that are released. By heating the sample at a constant rate in high vacuum, it is possible to confirm the temperature dependence of even trace amounts of desorption (at the monolayer level). Additionally, for some components, it is also possible to calculate the number of molecules of the desorbed gas. We will introduce examples of TDS applied to representative materials.

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The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without causing any thermal impact to the base material. Repairs can be carried out even in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is minimized. ◎ For more details, please contact us. ◎ If a detailed technical explanation is needed, please contact us.

The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without affecting the base material with heat. Repairs can be carried out in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is minimized. ◎ For more details, please contact us. ◎ If a detailed technical explanation is needed, please contact us.

● This is a leak testing device for small electronic components that does not use fluorinated inert liquids (PFAS-free). ● There is no longer a need for unstable visual confirmation through liquid immersion testing. It adopts a quantitative testing method that allows for stable pressure leak testing. ● It is a tabletop leak testing device specifically for gross leaks, with accuracy equal to or greater than that of liquid immersion testing. ● The detectable range is approximately 1×10⁻² Pa·m³/s to 1×10⁻⁶ Pa·m³/s (varies depending on the target product). ● It is suitable for sealed structures ranging from a few millimeters to a maximum of 80 × 70 mm. Please feel free to contact us for more information!

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