The device is high-performance and cost-effective, with a low price and the ability to manage various etching conditions through the built-in sequencer.
WLP has realized the application of RF power to the lower electrode (RIE method) or to the upper electrode (DP method) to accommodate diversified applications. It can be used for a variety of processes such as etching of 6-8 inch Si, Poly-Si, etching of polyimide-based resins, and ashing of photoresists.
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basic information
【Specifications】 ○ Processing Method: Parallel Plate Plasma Excitation Method (DP/RIE switchable) ○ Processing Chamber: Made of AL (Single Chamber) ○ RF Power Supply: 600–1000W ○ Processing Gas: O2 1000 SCCM ○ One system can be added (optional) ○ Purge Gas: N2 ○ Throughput: 3000 wafers/400 hours (when etching polyimide film at 1μm) ○ Processing Steps: 3 steps, 10 recipes ○ Wafer Size: Compatible with 6-inch and 8-inch ○ Wafer Transport Method: Vertical Operation Cassette Elevator (compatible with 6-inch and 8-inch) ○ Main Body Dimensions: W600×D1500×H1850 ○ Main Body Weight: 650kg ● For other functions and details, please contact us.
Price information
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Delivery Time
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Applications/Examples of results
【Applications】 ○ Etching of 6-8 inch Si, Poly-Si, etc. ○ Etching of polyimide-based resins and ashing of photoresists ○ Usable for a wide variety of other processes ● For other functions and details, please contact us.
Company information
Esclafte Co., Ltd. is a company where experienced expert engineers shape our customers' requests and contribute to the progress and development of society through the supply of excellent products.