Introducing the results of depth resolution measurements using compound semiconductor samples as specimens.
SIMS (Secondary Ion Mass Spectrometry) is a device that irradiates the surface of a sample with a primary ion beam (O2+, Cs+) of several kV, analyzes the sputtered secondary ions by mass spectrometry, and can analyze trace impurities in the sample. Using the Q-pole SIMS (ULVAC: ADEPT-1010), we used a compound semiconductor sample of Al0.28Ga0.72As/GaAs, which was deposited by molecular beam epitaxy (MBE) in 50 nm layers, to determine the depth resolution. By optimizing the primary ion beam, we were able to enhance the depth resolution to 5 nm based on the slope of the 27Al profile at the interface between the Al0.28Ga0.72As film and the GaAs film. *For more details, please refer to the PDF document or feel free to contact us.*
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The Ion Tech Center is a professional group that provides consulting and technical development support in "ion implantation," "physical analysis," and research and development. We aim to be a good partner for companies and university researchers as a creative laboratory equipped with cutting-edge technology and facilities that meet the demands of the times.