High-resolution Fourier-transform infrared spectrometer nano-FTIR

basic information

【Specifications】 ○ Scan Area: 100×100μm (closed loop) ○ Sample Stage ・Motor Drive: Maximum Travel Range X=60mm, Y=15mm, Z=6mm (AFM Head Side X=30mm, Y=3mm, Z=4mm) ○ Noise Level: <0.2nm RMS (1.5 - 150Hz) ○ Optical Microscope ・Lateral Resolution 0.8μm, Field of View 0.7mm ・Long Working Distance Objective Lens (WD=20mm) ○ CCD Camera: 5Mpix High-Speed Digital Imaging ○ Excitation Wavelength ・Visible, Infrared, and Terahertz (400nm to 200µm) * Nano-spectroscopy in the mid-infrared range is possible with a dedicated broadband light source. ● For more details, please contact us.

Price range

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Applications/Examples of results

【Purpose】 ○ As a Fourier Transform Infrared Spectrometer → Imaging and spectral measurement are possible ● For more details, please contact us.

Detailed information

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  PMMA/PS polymer blend Imaging focused on the PMMA structure at a wavenumber of 1740 cm-1. Both reflection and phase images are obtained simultaneously with AFM images. The signal-to-noise ratio is measured well, allowing for the visualization of compositional information down to fine structures.

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  Organic foreign matter The main component of the foreign matter attached to the PMMA substrate is PDMS, and high spatial resolution fingerprint region spectra were obtained without the influence of the substrate. Additionally, when performing line spectrum mapping (30 points with a 20 nm step) across the PMMA/silicon interface on the same sample, peaks originating from PMMA disappeared in one step near the interface, confirming high spatial resolution not only in fixed wavenumber imaging but also in spectroscopy.

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  Defects on SiC In the compound semiconductor SiC, inherent defects that are not visible in AFM images around the indentation are visualized with high resolution.

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  CVD graphene film Visualization of electrical and plasmonic phenomena at CVD graphene grain boundaries using scanning plasmon interference method. Grain boundaries that are not clearly visible in the topographical images from AFM are distinctly indicated due to standing waves caused by plasmon scattering.

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  Organic semiconductor (pentacene) crystal phases A pentacene film approximately 40 nm thick was deposited on SiO/Si using thermal deposition, and terraces were confirmed from the surface roughness image (diameter about 3 mm, height about 1.5 nm). Near-field spectroscopy allows for the identification of each crystal phase, which has been verified by XRD and other methods. Spectra were measured by separating two points approximately 1 µm apart. Differences as small as a few cm-1 can be detected. Understanding the crystal phases is important because the macroscopic conduction properties of pentacene are determined by the nanoscale domain structure.