It is also expected to be a next-generation power semiconductor device.
This is an introduction to "GaN (Gallium Nitride)," the main product of Shinyo Corporation. Compared to silicon, it has a bandgap that is about three times wider (3.42 eV) and an insulation breakdown voltage that is about ten times higher (3.0 MV/cm). When the on-resistance is reduced to the same level as silicon at 10 mΩ·cm², the withstand voltage reaches 1600 V. Additionally, it can generate relatively short wavelengths of light, such as blue and green, and is used in various optical devices, making it a promising candidate for next-generation power semiconductor devices alongside SiC. 【Features】 ■ Bandgap is about three times wider compared to silicon ■ Insulation breakdown voltage is about ten times higher ■ Withstand voltage of 1600 V ■ Capable of generating relatively short wavelengths of light, such as blue and green ■ Used in various optical devices *For more details, please refer to the PDF materials or feel free to contact us.
Inquire About This Product
basic information
【Wafer Specifications (Excerpt)】 ■Diameter: Φ50.8±1mm ■Thickness: 350±25μm ■Orientation: C-axis (0001) off-angle to M-axis 0.35±0.15° ■Resistivity (300K) ・N-type undoped: <0.5Ω・cm ・N-type Si-doped: <0.05Ω・cm ・Fe-doped semi-insulating: 1×10^6 Ω・cm *For more details, please refer to the PDF document or feel free to contact us.
Price information
-
Delivery Time
※For more details, please contact us.
Applications/Examples of results
For more details, please refer to the PDF document or feel free to contact us.
catalog（1）
Download All Catalogs
Company information
- We will provide high-quality, low-cost materials consistently through our strong overseas network. - Our extensive product range and domestic inventory will significantly shorten development time and delivery schedules.