High-resolution TEM observation using Cs-corrected TEM
By using a Cs-corrected TEM device that compensates for spherical aberration, it is possible to observe the cross-sectional structure of devices with high resolution. This case presents data from high-resolution (HR)-TEM observation and EDX elemental distribution analysis of commercially available MPU transistor components. Even for fine multilayer structures like FinFETs, it is possible to clearly observe the structure and elemental distribution of the devices using a Cs-corrected TEM.
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basic information
For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of LSI and memory.
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Download All Catalogs![[Analysis Case] Structural Evaluation of Fine Transistors_C0338](https://image.mono.ipros.com/public/catalog/image/01/d66/335002/IPROS501674815252244279.jpg?w=120&h=170)
Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
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