It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.
Gallium nitride (GaN) is used as a material for LEDs and power devices due to its high thermal conductivity and high breakdown voltage characteristics. In its manufacturing process, the production of high-quality GaN crystals without crystal defects is required, making the assessment of damage from ion implantation and the degree of recovery an important evaluation criterion. This document presents a case study evaluating the damage caused by ion implantation into GaN substrates using XAFS. It is possible to detect disturbances in the crystal structure near the GaN surface, as well as N2 and interstitial N within the film, with high precision.
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Analysis of lighting and power devices.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!