[Analysis Case] Evaluation of Si-based IGBT Chip Cross-section by Low-Temperature Micro Photoluminescence Analysis
It is possible to confirm the influence of the lifetime killer from the cross-sectional direction.
IGBT (Insulated Gate Bipolar Transistor) is used in various products as a power semiconductor module, ranging from home appliances to industrial equipment. Lifetime control is implemented for performance improvement in IGBTs, but this control is achieved by creating defects (lifetime killers) in the drift layer. By conducting low-temperature micro-PL analysis from the cross-section, it is possible to gain insights into lifetime killers.
Inquire About This Product
basic information
For detailed data, please refer to the catalog.
Price information
-
Delivery Time
Applications/Examples of results
Analysis of power devices, LSI, memory, and electronic components.
catalog（1）
Download All Catalogs![[Analysis Case] Evaluation of Si-based IGBT Chip Cross-section by Low-Temperature Micro Photoluminescence Analysis_C0485](https://image.mono.ipros.com/public/default/object/noimage_l.gif?w=120&h=170)
Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!