8V, 4.7mΩ, P-channel NexFET power MOSFET 'CSD22206W'
This -8V, 4.7mΩ, 1.5mm×1.5mm device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible footprint, while also providing excellent thermal characteristics in a very low profile. With its low on-resistance, small footprint, and low profile, this device is ideal for battery-powered applications with volume constraints. 【Features】 ■ Extremely low resistance ■ Small footprint of 1.5mm×1.5mm ■ Lead-free ■ Gate ESD protection ■ RoHS compliant *For more details, please contact us.
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basic information
【Other Features】 ■ No halogen used ■ Gate-source voltage clamp *For more details, please contact us.
Applications/Examples of results
【Usage】 ■ Handheld electronic devices for consumers ■ Battery-operated devices with space constraints, such as wearables *For more details, please contact us.
Company information
Texas Instruments (Headquarters: Dallas, Texas, USA; Chairman, President, and CEO: Rich Templeton; Abbreviation: TI) supports customers in developing new electronic devices that make the world "more convenient, healthier, safer, environmentally friendly, and enjoyable," and works together to solve challenges. TI has manufacturing, design, and sales locations in over 30 countries worldwide and continues to pursue innovation. TI's analog ICs and embedded processing support everyday life from behind the scenes in a society overflowing with digital devices. The company is actively investing in products and technologies for markets that will become increasingly important in the future, such as the environment, energy, healthcare, medical devices, and security. Technical Inquiry Contact TI Japan Product Information Center 【http://www.tij.co.jp/pic/】