[Video] PICS3D (Fabry-Perot Edition)

basic information

<Interface> ■Standard tools for structural input and result display are included. ■Can be written in a proprietary scripting language and executed from GUI or command line. ■Program control is possible using batch files or scripting languages. <Material Macro> ■Compounds (InGaAsNSb, AlGaAsSb, InAs, InAlAs, InP, InGaAlAs, etc.) ■Nitrides (GaN, InGaN, AlGaN, c-GaN (hexagonal), c-AlN (hexagonal), etc.) ■Silicon (poly, SiGe, h-SiC (hexagonal), a-Si (amorphous), SiO2, etc.) ■Metals (metal (general purpose), ITO, Cu, Ag, Fe, Zn, Cd, Al, Sn, Pb, etc.) ■Insulators (air, vacuum, TiO2, AlAs-oxide, sapphire, etc.) ■Organics (BPhen, BCzVBi doped CBP, CuPc, LiF, etc.) ■Others (GaP, CdS, ZnTe, ZnSe, ZnS, etc.)

Price information

-

Delivery Time

Applications/Examples of results

<Applicable Devices and Models> ■ Devices with graded composition ■ Broad area lasers ■ Multi-quantum well (MQW) lasers ■ Dual polarization lasers ■ Lasers with many-body effects ■ Lasers using mini-band transport models ■ Modulators ■ Ridge-type lasers ■ Multi-resonator lasers ■ Multi-mode lasers ■ FFP ■ Pump lasers ■ EEIM lateral modes ■ Quantum cascade lasers (QCL) ■ Quantum dot lasers (QDot) ■ Temperature dependence ■ Thermal analysis ■ Type II multi-quantum wells etc. <Analysis and Plots> ■ Spatial distribution of physical quantities (potential, carrier density, current distribution, band diagrams, optical mode distribution, temperature distribution, wave functions of multi-quantum wells, NFP, FFP, etc.) ■ Bias dependence (L-I characteristics, I-V characteristics, current and gain, current and refractive index changes, etc.) ■ Spectrum (mode gain, spontaneous emission, refractive index changes, etc.) ■ AC analysis (frequency characteristics, response output, etc.)