PICS3D(Fabry-Perot Edition)

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PICS3D (Fabry-Perot Edition)

last updated：May 12, 2020

Official site

Device simulation program specialized for semiconductor lasers in two dimensions (formerly LASTIP)

<Main Features> ■ Simulation software for semiconductor lasers based on a two-dimensional structural model ■ Calculations can be executed more lightly as effects in the resonator direction are not included ■ Convergence is smoother as the finite element calculation mesh is also set in two dimensions <Diverse Physical Models and Functions> ■ Light output-current (L-I) characteristics ■ Current-voltage (I-V) characteristics ■ Two-dimensional potential, electric field, and current distribution ■ Two-dimensional distribution of electron and hole density ■ Band diagrams under various bias conditions ■ Two-dimensional distribution of occupancy and density of deep level traps in semiconductors ■ Two-dimensional optical field distribution of multiple transverse modes ■ Two-dimensional local optical gain distribution ■ Mode-dependent refractive index dependence on bias current ■ Mode-dependent gain and refractive index change dependence on bias current ■ Dependence of spontaneous emission spectrum on current ■ Far-field distribution ■ Time evolution (transient model) and temperature dependence (uniform temperature) of all the above quantities ■ For other features and details, please download the catalog or contact us. ■ If you wish to try a trial version, please contact us using the information below.

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basic information

<Interface> ■Standard tools for structural input and result display ■Executable from GUI or command line, written in a unique scripting language ■Program control possible via batch files and scripting languages <Material Macro> ■Compounds (InGaAsNSb, AlGaAsSb, InAs, InAlAs, InP, InGaAlAs, etc.) ■Nitrides (GaN, InGaN, AlGaN, c-GaN (hexagonal), c-AlN (hexagonal), etc.) ■Silicon (poly, SiGe, h-SiC (hexagonal), a-Si (amorphous), SiO2, etc.) ■Metals (metal (general-purpose), ITO, Cu, Ag, Fe, Zn, Cd, Al, Sn, Pb, etc.) ■Insulators (air, vacuum, TiO2, AlAs-oxide, sapphire, etc.) ■Organics (BPhen, BCzVBi doped CBP, CuPc, LiF, etc.) ■Others (GaP, CdS, ZnTe, ZnSe, ZnS, etc.)

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Applications/Examples of results

<Applicable Devices and Models> ■ Devices with graded composition ■ Broad area lasers ■ Multi-quantum well (MQW) lasers ■ Dual polarization lasers ■ Lasers with many-body effects ■ Lasers using mini-band transport models ■ Modulators ■ Ridge-type lasers ■ Multi-resonator lasers ■ Multi-mode lasers ■ FFP ■ Pump lasers ■ EEIM lateral modes ■ Quantum cascade lasers (QCL) ■ Quantum dot lasers (QDot) ■ Temperature dependence ■ Thermal analysis ■ Type II multi-quantum wells etc. <Analysis and Plotting> ■ Spatial distribution of physical quantities (potential, carrier density, current distribution, band diagrams, optical mode distribution, temperature distribution, wave functions of multi-quantum wells, NFP, FFP, etc.) ■ Bias dependence (L-I characteristics, I-V characteristics, current and gain, current and refractive index changes, etc.) ■ Spectrum (mode gain, spontaneous emission, refractive index changes, etc.) ■ AC analysis (frequency characteristics, response output, etc.)