We ensure the surface roughness required by the customer and enable room temperature bonding.
We offer "pre-bond CMP contract processing" at our company. As an example of our processing achievements in pre-bond CMP, we can work with materials used in semiconductors and compound semiconductors such as Si, Cu, W, Ta, TaN, SiO2, TEOS, GaAs, SiC, GaN, and InP. We are capable of both homogeneous bonding and bonding between these different materials. Before processing your wafers through our CMP contract processing, we will meet your needs with reliable technology backed by numerous in-house experiments. 【Example of Processing Achievements】 ■ Single Crystal Oxides - LiNbO3, LiTaO3, Al2O3 (Sapphire), etc. ■ Polycrystalline Materials - Poly-Si, SiC, Al2O3/YAG, etc. ■ Metals - Au, Pt, Ag, Cu, Ti, TiN, Ni, W, Al, Sn, Pb, Zn, etc. ■ Ceramics - Alumina, Ferrite, Zirconia *For more details, please refer to the PDF document or feel free to contact us.
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【Example of a Process】 <Need for Selectivity in CMP of Insulating Layer to Expose Electrodes> 1. Stop processing at the stop layer (development of slurry composition that ensures processing selectivity is essential) 2. Care is needed for various film structures (various processing target materials and stop layers) 3. Dishing amount of the insulating layer 4. Corrosion of the electrode, which is the stop layer *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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While various structures such as MEMS devices and TSVs are being examined, we are developing appropriate CMP slurries in-house to accommodate the CMP processes of next-generation devices and are providing CMP contract processing tailored to our customers' needs. We not only handle mass production processing from a few prototypes to tens of thousands of units but also conduct technical transfers (CMP process transfers).