"Particle-PLUS" is a plasma and rarefied fluid analysis software that uses the particle method.
"Particle-PLUS" is a simulation software suitable for research, development, and manufacturing of devices and materials using plasma. - It specializes in low-pressure plasma analysis. - It is capable of advanced physical model analysis such as CCP and external circuit models. - It excels in plasma simulation for low-pressure gases, where fluid modeling is challenging. - It supports 2D (two-dimensional) and 3D (three-dimensional) analyses, efficiently handling complex models. - As a strength of our in-house developed software, it can perform CCP and magnetron sputtering calculations with standard functions, and customization to fit customer equipment is also possible. ◆ Supports various cases ◆ - Magnetron sputtering - PVD, plasma CVD - Capacitively coupled plasma (CCP) - Dielectric barrier discharge (DBD) - Electrophoresis, etc. ◆ Outputs various calculation results ◆ - Potential distribution - Electron and ion density distribution/temperature distribution/generation distribution - Particle flux and energy flux to the wall - Energy spectrum of electrons and ions at the wall - Neutral gas density distribution/temperature distribution/velocity distribution, etc. *Please feel free to contact us for more details.
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basic information
**Features** - The time scheme uses an implicit method, allowing for stable time evolution to be obtained with a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*
Price range
P5
Delivery Time
P4
Applications/Examples of results
【Dual-frequency capacitively coupled plasma】 - Optimization of voltage and other parameters to obtain high-density plasma - Damage to chamber walls - Optimization of power using an external circuit model - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be smooth and simulated with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC magnetron sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed voltage magnetron sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion implantation】 - The influence of the substrate on the erosion distribution 【Time evolution of the applied voltage on the electrode plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - By changing calculation conditions, optimization of high-density plasma generation at low power is possible
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