GaAs solar cells using InGaP/GaInAs/Ge on Ge substrate.
The "Concentrator Type 3-Junction GaAs Solar Cell (3C44C 10mm)" has an effective cell area of 10mm × 10mm = 100mm². The substrate material is InGaP/GaInAs/Ge on a Ge substrate, with dimensions of 10.1 × 10.5mm ± 0.1mm. The cell thickness is 190 ± 20μm. Additionally, the bonding methods include welding, soldering, and adhesive bonding. 【Design and Mechanical Characteristics (Excerpt)】 ■ Substrate Material: InGaP/GaInAs/Ge on Ge substrate ■ AR Coating: TiOx/Al2Ox ■ Dimensions: 10.1 × 10.5mm ± 0.1mm ■ Effective Cell Area: 10mm × 10mm = 100mm² ■ Cell Thickness: 190 ± 20μm *For more details, please refer to the PDF document or feel free to contact us.
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【Other Design and Mechanical Characteristics】 ■Polarity: N on P ■Surface Electrode Thickness: ≧2.8μm (Ag/Au alloy finish) ■Back Electrode Thickness: ≧2.6μm (Ag/Au alloy finish) ■Joining Method: Welding, Soldering, Adhesive *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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Rikei Corporation was established in 1957 and is a solution vendor in the IT and electronics industry, celebrating its 65th anniversary. We propose a variety of solutions centered around cutting-edge technologies and advanced products in the fields of system solutions, network solutions, and electronic components and devices, tailored as the optimal "step-ahead solution" to meet our customers' needs.
