We provide custom structure MBE/MOCVD epitaxial growth on compound semiconductor epitaxial InP substrates.
We provide custom structure MOCVD epitaxial growth on GaAs substrates ranging from 2 inches to 6 inches. We offer comprehensive services for GaAs epitaxial substrates to companies, universities, and scientific research institutions, including epitaxial structure design, epitaxial materials, and testing analysis.
Inquire About This Product
basic information
◆Infrared LD Wavelength range (808nm, 980nm and others in 800~1064nm) ◆Vertical Cavity Surface Emitting Laser (VCSEL) Wavelength range (650nm, 850nm) ◆RCLED (Resonant Cavity LED) Wavelength range (850~1100nm) ◆Photodetector (PD) Wavelength range (<870nm (GaAs absorption layer)
Price range
Delivery Time
Applications/Examples of results
◆Infrared LD ◆Vertical Cavity Surface Emitting Laser (VCSEL) ◆Resonant Cavity LED (RCLED) ◆Photodetector (PD)
Company information
Introducing semiconductor products from Russia, South Korea, and China.
![[Research Material] Global Market for Thick Film Circuit Boards](https://image.mono.ipros.com/public/product/image/2d3/2000844351/IPROS10057961263403753632.jpeg?w=280&h=280)
![[Process Analysis Instrument Technical Documentation] Automatic Measurement of Hydrogen Peroxide in CMT Process](https://image.mono.ipros.com/public/product/image/9a2/2000810562/IPROS50458434936613810770.jpeg?w=280&h=280)
