We provide custom structure MBE/MOCVD epitaxial growth on compound semiconductor epitaxial InP substrates.
We provide custom structure MOCVD epitaxial growth on GaAs substrates ranging from 2 inches to 6 inches. We offer comprehensive services for GaAs epitaxial substrates to companies, universities, and scientific research institutions, including epitaxial structure design, epitaxial materials, and testing analysis.
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basic information
◆Infrared LD Wavelength range (808nm, 980nm and others in 800~1064nm) ◆Vertical Cavity Surface Emitting Laser (VCSEL) Wavelength range (650nm, 850nm) ◆RCLED (Resonant Cavity LED) Wavelength range (850~1100nm) ◆Photodetector (PD) Wavelength range (<870nm (GaAs absorption layer)
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Applications/Examples of results
◆Infrared LD ◆Vertical Cavity Surface Emitting Laser (VCSEL) ◆Resonant Cavity LED (RCLED) ◆Photodetector (PD)
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Introducing semiconductor products from Russia, South Korea, and China.
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